Murata manufacturing co., ltd. (20240321975). BIPOLAR TRANSISTOR AND SEMICONDUCTOR simplified abstract
Contents
BIPOLAR TRANSISTOR AND SEMICONDUCTOR
Organization Name
murata manufacturing co., ltd.
Inventor(s)
Kenji Sasaki of Nagaokakyo-shi (JP)
Koji Inoue of Nagaokakyo-shi (JP)
Shinnosuke Takahashi of Nagaokakyo-shi (JP)
Satoshi Goto of Nagaokakyo-shi (JP)
Masao Kondo of Nagaokakyo-shi (JP)
BIPOLAR TRANSISTOR AND SEMICONDUCTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321975 titled 'BIPOLAR TRANSISTOR AND SEMICONDUCTOR
Simplified Explanation: The patent application describes a mesa structure with layers laminated on a substrate, including an emitter layer, a base layer, and a collector layer. Electrodes are connected to these layers in a specific configuration.
Key Features and Innovation:
- Mesa structure with emitter, base, and collector layers
- Electrodes connected to emitter and base layers
- Specific plan view configuration of electrodes
Potential Applications: This technology could be used in semiconductor devices, electronic components, and integrated circuits.
Problems Solved: This technology addresses the need for efficient and precise electrical connections in semiconductor devices.
Benefits:
- Improved performance of semiconductor devices
- Enhanced electrical connectivity
- Potential for miniaturization of electronic components
Commercial Applications: This technology could be applied in the manufacturing of various electronic devices, leading to improved performance and reliability in the market.
Prior Art: Readers can explore prior patents related to mesa structures, semiconductor devices, and integrated circuits to understand the background of this technology.
Frequently Updated Research: Researchers may be conducting studies on optimizing the configuration of electrodes in semiconductor devices for better performance.
Questions about Mesa Structure Technology: 1. What are the potential challenges in implementing this technology in mass production? 2. How does this technology compare to existing methods of connecting layers in semiconductor devices?
Original Abstract Submitted
a mesa structure including a collector layer, a base layer, and an emitter layer laminated on a substrate is formed. an emitter electrode electrically connected to the emitter layer is disposed on the mesa structure. moreover, a base electrode electrically connected to the base layer is disposed on the mesa structure. a collector electrode is disposed in such a manner as to surround the mesa structure in plan view, and the collector electrode is electrically connected to the collector layer. the emitter electrode includes a first part and a second part. in plan view, the base electrode surrounds the first part of the emitter electrode, and the second part of the emitter electrode surrounds the base electrode.
