Kabushiki kaisha toshiba (20240321665). SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Organization Name
Inventor(s)
Fumiyoshi Kawashiro of Tokyo (JP)
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240321665 titled 'SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
The semiconductor device described in the abstract includes a semiconductor chip with drain, source, and gate electrodes, mold layers, and coating films. The chip has different regions on its surfaces, with corresponding electrodes provided on each region. Mold layers and coating films are also present on various surfaces of the chip and electrodes.
- The semiconductor device features a semiconductor chip with drain, source, and gate electrodes.
- Mold layers are provided on the side surfaces of the chip and electrodes.
- Coating films are present on different surfaces of the chip and electrodes.
- The drain electrode is located on the drain region of the chip.
- The source electrode is positioned on the source region of the chip.
- The gate electrode is placed on the gate region of the chip.
Potential Applications: This technology can be used in various semiconductor devices such as transistors, integrated circuits, and microprocessors.
Problems Solved: This technology helps in improving the performance and reliability of semiconductor devices by providing proper insulation and protection to the chip and electrodes.
Benefits: Enhanced performance, increased reliability, and improved durability of semiconductor devices.
Commercial Applications: This technology can be utilized in the manufacturing of electronic devices, consumer electronics, automotive electronics, and industrial equipment.
Questions about the technology: 1. How does the presence of mold layers and coating films impact the overall performance of the semiconductor device? 2. What are the specific materials used in the construction of the mold layers and coating films for this technology?
Original Abstract Submitted
according to one embodiment, a semiconductor device includes a semiconductor chip, drain, source and gate electrodes, mold layers and first and second coating films. the semiconductor chip has a drain region on a first surface, and source and gate regions on a second surface facing the first surface. the drain electrode is provided on the drain region. the source electrode is provided on the source region. the gate electrode is provided on the gate region. the mold layers are provided on side surfaces of the semiconductor chip, the source and gate electrodes. the first coating films are provided on a lower surface and side surfaces of the drain electrode, an upper surface of the source electrode, and an upper surface of the gate electrode. the second coating films are provided on an upper surface and side surfaces of the mold layers.
