KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
Patent Applications by KABUSHIKI KAISHA TOSHIBA on March 14th, 2024
KABUSHIKI KAISHA TOSHIBA: 39 patent applications
KABUSHIKI KAISHA TOSHIBA has applied for patents in the areas of H01L29/872 (4), H01L23/492 (4), H01L23/13 (4), H01L29/78 (4), H01L29/66068 (3)
With keywords such as: semiconductor, layer, portion, electrode, surface, signal, region, member, according, and third in patent application abstracts.
See the following report for KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024: KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
Patent Applications by KABUSHIKI KAISHA TOSHIBA
20240082764.FILTER, GAS SENSOR, AND GAS SENSOR SYSTEM_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Akira FUJIMOTO of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yosuke AKIMOTO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hiroaki YAMAZAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): B01D39/16, B01D19/00, B01D39/20, G01N33/00
Abstract: according to one embodiment, a filter includes a first layer and a second layer. the first layer includes a first resin provided with a plurality of holes. the first layer includes a first face. at least a part of the plurality of holes reaches the first face. the second layer includes a second resin. the second resin blocks at least a part of the plurality of holes reaching the first face.
Inventor(s): Masanori MIZOBE of Shinagawa (JP) for kabushiki kaisha toshiba, Shinichi YAMAMOTO of Fujisawa (JP) for kabushiki kaisha toshiba, Tadashi INO of Yokohama (JP) for kabushiki kaisha toshiba, Tooru TANAKA of Yokosuka (JP) for kabushiki kaisha toshiba, Hideshi NAKANO of Fujisawa (JP) for kabushiki kaisha toshiba
IPC Code(s): B22F1/052, B22F1/065, B33Y70/00, B33Y80/00
Abstract: a metal powder for 3d printer includes a plurality of metal particles. a particle size distribution of the plurality of metal particles has a maximum peak within particle diameters of 1 �m to 200 �m. the particle size distribution gives a difference d−dof 10 �m or more between dand d, ddenoting a particle diameter in which a cumulative percentage is 90% in volume proportion, and ddenoting a particle diameter in which a cumulative percentage is 10% in volume proportion.
Inventor(s): Kentaro SEZAKI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): B65G43/08
Abstract: an article supply system according to an embodiment includes an article supply apparatus and a first recognition apparatus. the article supply apparatus reads a first image from a first surface of an article conveyed by a first conveyance path, outputs the first image, and supplies the article to an article sorting apparatus. the first recognition apparatus recognizes sorting information based on the first image and outputs a first recognition result including the recognized sorting information. the article sorting apparatus causes a second conveyance path to convey the article supplied from the article supply apparatus, reads a second image from a second surface of the conveyed article, receives the first recognition result or a second recognition result including sorting information recognized from the second image, and controls sorting of the article based on the first recognition result or the second recognition result.
Inventor(s): Hiroaki YAMAZAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Ping WANG of Fujisawa Kanagawa (JP) for kabushiki kaisha toshiba, Ryota KITAGAWA of Setagaya Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): C07C1/12, C01B3/06, C01B13/02, C01B32/40, G01F1/74, G01N33/00
Abstract: according to one embodiment, a data processing device includes an acquisitor and a processor. the acquisitor can acquire a first concentration signal obtained from a first concentration sensor configured to detect a first concentration of a first target substance included in a first output gas and a first flow rate signal obtained from a first flow rate sensor configured to detect a first flow rate of the first output gas. the processor can derive a first concentration value corresponding to the first concentration based on the first concentration signal. the processor can derive a first corrected conversion coefficient obtained by correcting a first conversion coefficient regarding a relationship between the first flow rate signal and the first flow rate based on the first concentration value. the processor can derive a first flow rate value corresponding to the first flow rate based on the first flow rate signal.
20240085181.SENSOR AND ELECTRONIC DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Kei MASUNISHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Etsuji OGAWA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yasushi TOMIZAWA of Fuchu Tokyo (JP) for kabushiki kaisha toshiba, Fumito MIYAZAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Daki ONO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Kengo UCHIDA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hiroki HIRAGA of Saitama Saitama (JP) for kabushiki kaisha toshiba, Shiori KAJI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hideaki MURASE of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G01C19/5656, G01C19/5663
Abstract: according to one embodiment, a sensor includes a base, a first support portion fixed to the substrate, and a first member supported by the first support portion. a gap is provided between the base and the first member. the first beam electrode and the second beam electrode satisfy at least one of a first condition, a second condition, a third condition, a fourth condition, a fifth condition, a sixth condition, a seventh condition, or an eighth condition.
20240085240.PHOTON DETECTION SYSTEM AND METHOD_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Mirko SANZARO of Cambridge (GB) for kabushiki kaisha toshiba, Christopher MEAYERS of Cambridge (GB) for kabushiki kaisha toshiba, James F. DYNES of Cambridge (GB) for kabushiki kaisha toshiba, Andrew SIMPKINS of Cambridge (GB) for kabushiki kaisha toshiba, Andrew James SHIELDS of Cambridge (GB) for kabushiki kaisha toshiba
IPC Code(s): G01J1/44
Abstract: a photon detection system comprising an avalanche photodiode configured to generate a photodiode signal in response to an incident photon. the photon detection system also comprises a biasing circuit configured to supply a gating signal to the avalanche photodiode. the gating signal is a periodic signal configured to reverse bias the avalanche photodiode above and below its breakdown voltage for photon detection during each period. the photon detection system further comprises a non-reflective filter circuit configured to receive, at an input port, the photodiode signal, and provide, at a first output port, a first filtered output signal by applying a low-pass filter with a first cut-off frequency to the received photodiode signal.
Inventor(s): Yasunori TAGUCHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Kouta NAKATA of Tokyo (JP) for kabushiki kaisha toshiba, Susumu NAITO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yuichi KATO of Moriya Ibaraki (JP) for kabushiki kaisha toshiba, Shinya TOMINAGA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Naoyuki TAKADO of Machida Tokyo (JP) for kabushiki kaisha toshiba, Ryota MIYAKE of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yusuke TERAKADO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Toshio AOKI of Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): G01M99/00
Abstract: according to one embodiment, an anomaly detection apparatus includes a processing circuit. the processing circuit is configured to: acquire measured values from sensors installed in a system, a first function, a first threshold, and a second function to output a second threshold; generate the predicted values based on the measured value and the first function; detect that a deviation between the measured values and the predicted values exceeds the first threshold; calculate the feature quantities based on the measured values; and determine whether a number of consecutive times is equal to or larger than the second threshold to detect an anomaly or a sign of the anomaly.
20240085360.SENSOR AND SENSOR SYSTEM_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Yoshihiko KURUI of Chigasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hiroaki YAMAZAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yosuke AKIMOTO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Ping WANG of Fujisawa Kanagawa (JP) for kabushiki kaisha toshiba, Fumitaka ISHIBASHI of Sumida Tokyo (JP) for kabushiki kaisha toshiba, Yumi HAYASHI of Ayase Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G01N27/22
Abstract: according to one embodiment, a sensor includes a detection device and a circuit portion. the detection device includes a first detection portion and a second detection portion. the first detection portion includes a first detection element. the first detection element includes a first conductive member and a first detection member. the second detection portion includes a second detection element. the second detection element includes a second conductive member and a second detection member. the circuit portion is configured to execute a first detection portion operation for outputting a first detection result corresponding to a first detection value based on the first detection member when a first current is supplied to the first conductive member. in a case where a first evaluation value is not within a first range, the circuit portion is configured to execute a second detection portion operation by the second detection portion.
20240085451.SENSOR AND ELECTRONIC DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Kei MASUNISHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Etsuji OGAWA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yasushi TOMIZAWA of Fuchu Tokyo (JP) for kabushiki kaisha toshiba, Fumito MIYAZAKI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Daki ONO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Kengo UCHIDA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hiroki HIRAGA of Saitama Saitama (JP) for kabushiki kaisha toshiba, Shiori KAJI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hideaki MURASE of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G01P15/097, G01P15/18
Abstract: according to one embodiment, a sensor includes a base body, a support portion fixed to the base body, and a first member supported by the support portion. a gap is provided between the base body and a part of the first member. the first member includes a supported region, a first movable region, a first structure, a first support structure, a first connection structure, a first connect portion, and a first beam. the support portion is located between the base body and the supported region in a first direction from the base body to the support portion. the first beam extends along a second direction crossing the first direction. a first beam position of the first beam is located between a first movable region position of the first movable region and a support portion position of the support portion in the second direction.
Inventor(s): Daiki YODA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hiroki MORI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Tomoya TANDAI of Ota Tokyo (JP) for kabushiki kaisha toshiba, Akira MORIYA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Ryota SEKIYA of Kamakura Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G01S13/56, G01S7/41, G01S13/60, G01S13/87, G01S13/90
Abstract: according to one embodiment, an inspection system includes an estimation device and a detection device. the estimation device is configured to estimate an inspection range having a possibility that a predetermined object is present. the detection device is configured to generate detection information as to whether or not the predetermined object is present in the inspection range.
Inventor(s): Jumpei ANDO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Wataru WATANABE of Tokyo (JP) for kabushiki kaisha toshiba, Takayuki ITOH of Kawasaki kanagawa (JP) for kabushiki kaisha toshiba, Keisuke KAWAUCHI of Kawasaki kanagawa (JP) for kabushiki kaisha toshiba, Toshiyuki ONO of Kawasaki kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G05B23/02
Abstract: according to one embodiment, a data analysis apparatus includes processing circuitry. the processing circuitry acquires first factor data indicative of first manufacturing conditions of a first product, and acquires second factor data indicative of second manufacturing conditions of a second product. the processing circuitry computes, based on the first factor data, a first index value relating to a degree by which each of the first manufacturing conditions contributes to an abnormality, and computes, based on the second factor data, a second index value relating to a degree by which each of the second manufacturing conditions contributes to an abnormality. the processing circuitry computes a similarity between the first index value and the second index value.
Inventor(s): Kouta NAKATA of Tokyo (JP) for kabushiki kaisha toshiba, Kentaro TAKAGI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yaling TAO of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G06F16/28
Abstract: according to one embodiment, a data labeling work support apparatus includes a processor including hardware. the processor acquires a first label assigned to data. the processor acquires the data. the processor extracts a feature of the data. the processor groups the data based on a similarity or a distance of the feature. the processor assigns a second label to the grouped data. the processor calculates a degree of matching between the first label and the second label. the processor outputs information regarding a combination of the first label and the second label having a low degree of matching.
Inventor(s): Kosei FUME of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G06F40/279, G06F16/93, G06F40/216, G06N5/022
Abstract: according to one embodiment, a document classification apparatus includes a processing circuit. the processing circuit is configured to: acquire text content for each of logical elements for semi-structured document data including text data stored for each of the logical elements; select logical elements from the logical elements and generating logical element sets each including the logical elements; analyze text contents for the respective logical element sets and constructing respective word embedded spaces; select a first word embedded space and a second word embedded space including a common word shared with the first word embedded space from the word embedded spaces, and update the first word embedded space based on similarity to the common word in the second word embedded space; and output a classification result of the document data using the first word embedded space and embedding information of a feature quantity of a classification target.
Inventor(s): Yuka KOBAYASHI of Seto Aichi (JP) for kabushiki kaisha toshiba, Takami YOSHIDA of Kamakura Kanagawa (JP) for kabushiki kaisha toshiba, Kenji IWATA of Machida Tokyo (JP) for kabushiki kaisha toshiba, Tsuyoshi KUSHIMA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hisayoshi NAGAE of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Nayuko WATANABE of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G06F40/289, G06F16/245
Abstract: according to an embodiment, a keyword detection device includes a memory and one or more processors coupled to the memory. the one or more processors are configured to: detect a phrase related to a keyword from text information that is a recognition result of input information represented in a predetermined input form; calculate output similarities conforming to similarities between the phrase and the keywords included in a keyword list in which, for each of a plurality of the keywords, keyword notation of the corresponding keyword is associated with keyword form information representing the corresponding keyword in an input form; and output the keywords in the keyword list according to the output similarities.
Inventor(s): Kouta NAKATA of Shinagawa Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): G06Q30/0203, G06F17/16
Abstract: an information processing apparatus includes one or more hardware processors configured to: acquire a plurality of pieces of purchasing data including any of a plurality of pieces of user identification information, any of a plurality of pieces of product identification information, and performance information including at least one of a price and a number of purchases; perform matrix factorization of a purchase matrix with non-negative values calculated based on the performance information as element values, and calculate user hidden status information indicating a relation between the plurality of pieces of user identification information and hidden statuses related to purchasing, and product hidden status information indicating a relation between the hidden statuses and the plurality of pieces of product identification information; and control output of at least one of the user hidden status information and the product hidden status information.
Inventor(s): Hiroo SAITO of Kawasaki (JP) for kabushiki kaisha toshiba, Tomoyuki SHIBATA of Kawasaki (JP) for kabushiki kaisha toshiba
IPC Code(s): G06V10/774, G06V10/82, G06V20/70
Abstract: according to one embodiment, an image processing apparatus includes one or more hardware processors configured to function as an acquisition unit a, a pseudo label estimation unit b, and a learning unit c. the acquisition unit a acquires unlabeled training data including an image to which a correct label of an attribute is unassigned. the pseudo-label estimation unit b estimates a pseudo-label, which is an estimation result of the attribute of the image of the unlabeled training data, based on an identification target region according to a type of the attribute to be identified by a first learning model to be learned in the image of the unlabeled training data. the learning unit c learns the first learning model identifying the attribute of the image by using first labeled training data with the pseudo-label being assigned to the image of the unlabeled training data.
Inventor(s): Akihiro HARIGAE of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B5/55
Abstract: according to one embodiment, a magnetic disk device includes a disk, a first head, and a control unit. the control unit includes an adjustment unit capable of adjusting k, a counter, a determination unit, and a refresh processing unit. the adjustment unit adjusts the k to a numerical value within a first range during a first period, and adjusts the k to a numerical value within a second range during a second period. the upper limit of the numerical value within the second range is smaller than a lower limit of the numerical value within the first range.
Inventor(s): Masafumi IWASHIRO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B5/596
Abstract: according to one embodiment, first, a frequency to be corrected by an ma additional filter is specified based on a head position error spectrum and a multi-rate sensitivity characteristic, in a state before the ma additional filter is added. then, a candidate in which a peak of the multi-rate sensitivity characteristic is equal to or less than a threshold value and a head position error is minimized is determined as the ma additional filter to be used, in a state in which each of a plurality of candidates of the ma additional filter is added.
20240087603.MAGNETIC DISK DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Nobuhiro MAETO of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): G11B5/596, G11B20/12
Abstract: according to one embodiment, a magnetic disk device includes a disk that has a track including a first servo sector and a second servo sector that is different from the first servo sector, a head that writes data to the disk and reads data from the disk, and a controller that records first signal strength record data related to a signal strength at which first target servo data that is a target of the first servo sector is read, and standardizes first signal strength data related to a signal strength at which the first target servo data is read when the first target servo data is read.
20240087802.ISOLATOR_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Jia LIU of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yusuke IMAIZUMI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yoshinari TAMURA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Daijo CHIDA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Minoru TAKIZAWA of Sagamihara Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01F27/36, H01F27/28, H01F27/32, H01F38/14, H01L23/552, H01L25/16
Abstract: according to one embodiment, an isolator includes: an isolator module including a first coil and a second coil that are separated with respect to a first direction and face each other; a magnetic member provided on the isolator module in such a manner that the magnetic member overlaps the first coil and the second coil when viewed in the first direction; and an insulating member covering the isolator module and the magnetic member.
Inventor(s): Tatsuo SHIMIZU of Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L21/04, H01L21/02, H01L29/16, H01L29/40, H01L29/66, H01L29/78
Abstract: a semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cmor more at a position 0.5 nm away from the silicon carbide layer, and a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1�10cmor more. the concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region.
Inventor(s): Seiya SAKAKURA of Hakusan Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L21/22, H01L29/32, H01L29/739
Abstract: provided is a semiconductor device including: a first semiconductor layer of a first conductivity type, and the first semiconductor layer including first conductivity type impurities; a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, and the second semiconductor layer including lower first conductivity type impurities than the first semiconductor layer; and a third semiconductor layer provided in the first semiconductor layer, and the third semiconductor layer including a hydrogen concentration of 5�10atoms/cmor more.
20240087969.SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Shunsuke KAMIYA of Nonoichi Ishikawa (JP) for kabushiki kaisha toshiba, Shinya OZAWA of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba, Shuji EGUMA of Hakusan Ishikawa (JP) for kabushiki kaisha toshiba, Masaru IZUMISAWA of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L23/13, H01L23/00, H01L23/492
Abstract: a semiconductor device includes a base member and a semiconductor chip. the base member includes a first surface, a second surface opposite to the first surface, and a protrusion at the second surface side. the semiconductor chip being mounted on the second surface of the base member. the semiconductor chip includes first and second electrodes, a control pad, and a semiconductor part. the first electrode is provided on a back surface of the semiconductor part. the second electrode and the control pad are provided on a front surface of the semiconductor part. the semiconductor chip includes a space between the second electrode and the control pad at the front surface side of the semiconductor part. the semiconductor chip is mounted so that the space between the second electrode and the control pad overlaps the protrusion of the base member.
20240087994.LEAD FRAME AND SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Kazuhiro WATANABE of Ibo Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L23/495, H01L23/13, H01L23/492
Abstract: a lead frame according to the present embodiments includes: a main body portion having a main surface including a mounting region on which a semiconductor chip is to be mounted; a lead portion connected to the main body portion; a groove portion provided in a main surface of the main body portion so as to surround the mounting region, the groove portion having an inner side surface and an outer side surface; and a protruding portion protrudingly provided along an inner edge of the groove portion.
20240088073.SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Yoichi HORI of Himeji Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L23/00, H01L23/31, H01L29/417, H01L29/872
Abstract: according to one embodiment, a semiconductor device includes a first electrode and a semiconductor layer above the first electrode in a first direction. the semiconductor layer has a first region and a second region surrounding the first region in a first plane perpendicular to the first direction. a second electrode has a first portion and a second portion that is thinner than the first portion and surrounds the first portion. the first portion and the second portion are on the first region of the semiconductor layer. a first resin is on the second region and covers the second portion and an outer periphery of the first portion of the second electrode. a second resin covers the second electrode and the first resin and is a resin material different from the first resin.
20240088086.SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Masatoshi ARAI of Hakusan Ishikawa (JP) for kabushiki kaisha toshiba, Kazuki MATSUO of Nonoichi Ishikawa (JP) for kabushiki kaisha toshiba, Masaru IZUMISAWA of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L23/00, H01L23/495
Abstract: a semiconductor device includes a base member, a semiconductor chip, and a conductive member. the base member includes a first surface, a second surface opposite to the first surface, and a protrusion at the second surface side. the semiconductor chip is mounted on the second surface of the base member. the semiconductor chip includes first and second electrodes, a control pad, and a semiconductor part. the semiconductor part has front and back surfaces; the first electrode is provided on the back surface; and the second electrode and the control pad are provided on the front surface. the conductive member bonded on the second electrode via a connection member. the connection member includes a side surface extending along a space between the second electrode and the control pad. the protrusion of the base member overlaps the second connection member and extends along the side surface of the connection member.
20240088109.SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Masahiko KURAGUCHI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Masahiro KOYAMA of Shinagawa Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L25/11, H01L29/20, H01L29/778, H01L29/872
Abstract: according to one embodiment, a semiconductor device includes a first terminal, a second terminal, a third terminal, a first transistor of a normally-off type, a second transistor of a normally-on type, and a diode. the first transistor includes a first source, a first drain, and a first gate. the first source is electrically connected to the first terminal. the first drain is electrically connected to the second terminal. the first gate is electrically connected to the third terminal. the second transistor includes a second source, a second drain, and a second gate. the second drain is electrically connected to the second terminal. the second gate is electrically connected to the first terminal. the diode includes an anode and a cathode. the anode is electrically connected to the first terminal. the cathode is electrically connected to the second source.
20240088220.SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Ryohei GEJO of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/06, H01L27/06, H01L29/739
Abstract: a semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face; a first semiconductor region of a first conductive type in the semiconductor layer, in contact with the second face, and including a first portion having a first minimum width, a second portion having a second minimum width smaller than the first minimum width, and a third portion connecting the first portion and the second portion and having a third minimum width smaller than the second minimum width; a plurality of second semiconductor regions of a second conductive type in contact with the second face; a third semiconductor region of the second conductive type between the first semiconductor region and the first face; a fourth semiconductor region of the first conductive type; a fifth semiconductor region of the second conductive type; a gate electrode facing the fourth semiconductor region.
Inventor(s): Shunsuke ASABA of Himeji Hyogo (JP) for kabushiki kaisha toshiba, Hiroshi KONO of Himeji Hyogo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/10, H01L21/04, H01L29/16, H01L29/66, H01L29/78
Abstract: a semiconductor device includes a first electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer located on a portion of the first semiconductor layer, a third semiconductor layer located on a portion of the second semiconductor layer, a second electrode connected to the third semiconductor layer, and a third electrode located in a region directly above at least a portion of the second semiconductor layer between the first semiconductor layer and the third semiconductor layer. the third semiconductor layer faces the first semiconductor layer via the second semiconductor layer. a side surface of the third semiconductor layer facing the first semiconductor layer has a shape that approaches the first semiconductor layer upward. the third semiconductor layer is of a first conductivity type and includes silicon and carbon. the third electrode faces the portion via a first insulating film.
20240088250.SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Hiroki HATADA of Kanazawa Ishikawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/423, H01L29/739, H01L29/78
Abstract: according to one embodiment, a semiconductor device includes first to third electrodes, first to third semiconductor regions and a gate electrode. the first semiconductor region is located on the first electrode and electrically connected with the first electrode. the second semiconductor region is located on the first semiconductor region. the third semiconductor region is located on the second semiconductor region. the gate electrode faces the second semiconductor region via a gate insulating layer. an upper part of the gate electrode includes first and second electrode portions. the first electrode portion faces the third semiconductor region via the gate insulating layer. the second electrode portion is arranged with the first electrode portion. the second electrode is located on the second and third semiconductor regions. the third electrode includes an interconnect part located on the second electrode portion and is separated from the second electrode.
Inventor(s): Tatsuo SHIMIZU of Shinagawa Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/66, H01L21/04, H01L21/324, H01L29/16, H01L29/78
Abstract: a method of manufacturing a semiconductor device according to an embodiment includes: forming a mask material having an opening on a surface of a silicon carbide layer; forming a trench in the silicon carbide layer using the mask material as a mask; performing first ion implantation for implanting carbon (c) into a bottom face of the trench using the mask material as a mask; forming a sidewall material on a side face of the trench; performing second ion implantation for implanting a p-type first impurity into the bottom face of the trench using the sidewall material as a mask; and performing heat treatment at 1600� c. or more.
20240088280.NITRIDE SEMICONDUCTOR DEVICE_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Hung HUNG of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Yasuhiro ISOBE of Ota Tokyo (JP) for kabushiki kaisha toshiba, Akira YOSHIOKA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Toru SUGIYAMA of Musashino Tokyo (JP) for kabushiki kaisha toshiba, Hitoshi KOBAYASHI of Yamato Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L29/778, H01L29/20, H01L29/417, H01L29/423
Abstract: according to one embodiment, a nitride semiconductor device includes a first semiconductor layer having a heterojunction, a second semiconductor layer on the first semiconductor layer and having another heterojunction, a drain electrode on the second semiconductor layer, a source electrode provided on the first semiconductor layer, a gate electrode provided on the first semiconductor layer between the drain electrode and the source electrode, and a first insulating film between the gate electrode and the drain electrode covering the first semiconductor layer and the second semiconductor layer. the second semiconductor layer being separated from the gate electrode by a portion of the insulating film. a distance from the second semiconductor layer to the gate electrode is shorter than a distance from the drain electrode to the gate electrode.
Inventor(s): Kiyohisa ICHIKAWA of Buzen Fukuoka (JP) for kabushiki kaisha toshiba
IPC Code(s): H01L33/62, H01L33/56
Abstract: a semiconductor device includes an insulating base material including first and second surfaces, the second surface being a back surface at a side opposite to the first surface; a plurality of metal pads provided on the first surface of the insulating base material, the plurality of metal pads being apart from each other; a first semiconductor element provided on one of the metal pads; a first resin provided on the first surface of the insulating base material, the first surface of the insulating base material including first and second regions, the plurality of metal pads being provided on the first region of the first surface, the first resin covering the second region of the first surface; and a second resin provided at the first surface side of the insulating base material, the second resin contacting the first resin and sealing the semiconductor element at the first surface side.
Inventor(s): Yuta KANAI of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Hirofumi YASUMIISHI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Kazuomi YOSHIMA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Tetsuya SASAKAWA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/04, H01M10/04
Abstract: in a manufacturing method of an electrode structure of an embodiment, in a belt-like member in which an uncoated region not coated with an active material-containing layer is formed in one of a pair of long edges and its vicinity in a current collector, the active material-containing layer is rolled, and a tension in a longitudinal direction is applied to the belt-like member between a pulling unit pulling the belt-like member and a rolling unit rolling the active material-containing layer. in the method, between the rolling unit and the pulling unit, a pair of holding members are brought into contact with the uncoated region from opposite sides in a thickness direction of the belt-like member to which the tension is applied, thereby holding the uncoated region between the holding members.
Inventor(s): Yoshiaki MURATA of Kawasaki (JP) for kabushiki kaisha toshiba, Kakuya UEDA of Kawasaki (JP) for kabushiki kaisha toshiba, Yasuhiro HARADA of Isehara (JP) for kabushiki kaisha toshiba, Kazuki ISE of Kawasaki (JP) for kabushiki kaisha toshiba, Norio TAKAMI of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/58, H01M50/296
Abstract: in general, according to one embodiment, a niobium-titanium oxide is provided. the niobium-titanium oxide satisfies formulae (1) to (3) below in an l*a*b* color space according to japanese industrial standard jis z 8722:2009:
Inventor(s): Yoshiaki MURATA of Kawasaki (JP) for kabushiki kaisha toshiba, Kakuya UEDA of Kawasaki (JP) for kabushiki kaisha toshiba, Yasuhiro HARADA of Isehara (JP) for kabushiki kaisha toshiba, Kazuki ISE of Kawasaki (JP) for kabushiki kaisha toshiba, Norio TAKAMI of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/58, H01M50/296
Abstract:
95.0≤*≤100 (1)
Inventor(s): Yoshiaki MURATA of Kawasaki (JP) for kabushiki kaisha toshiba, Kakuya UEDA of Kawasaki (JP) for kabushiki kaisha toshiba, Yasuhiro HARADA of Isehara (JP) for kabushiki kaisha toshiba, Kazuki ISE of Kawasaki (JP) for kabushiki kaisha toshiba, Norio TAKAMI of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/58, H01M50/296
Abstract:
−1.0≤*≤1.0 (2)
Inventor(s): Yoshiaki MURATA of Kawasaki (JP) for kabushiki kaisha toshiba, Kakuya UEDA of Kawasaki (JP) for kabushiki kaisha toshiba, Yasuhiro HARADA of Isehara (JP) for kabushiki kaisha toshiba, Kazuki ISE of Kawasaki (JP) for kabushiki kaisha toshiba, Norio TAKAMI of Yokohama (JP) for kabushiki kaisha toshiba
IPC Code(s): H01M4/58, H01M50/296
Abstract:
−1.0≤*≤6.0 (3).
Inventor(s): Makoto IDE of Koganei Tokyo (JP) for kabushiki kaisha toshiba, Mami MIZUTANI of Hachioji Tokyo (JP) for kabushiki kaisha toshiba, Yukitaka MONDEN of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Masako KIUCHI of Fuchu Tokyo (JP) for kabushiki kaisha toshiba, Takenori KOBAYASHI of Meguro Tokyo (JP) for kabushiki kaisha toshiba, Takahiro KASE of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Kenji MITSUMOTO of Setagaya Tokyo (JP) for kabushiki kaisha toshiba, Yoshihisa SUMIDA of Nakano Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H02J7/00, H01M10/48
Abstract: a storage battery management device according to one embodiment includes a hardware processor that causes a display device to display first remaining life information and second remaining life information. the first remaining life information indicates current remaining life of a storage battery system. the first remaining life information is calculated on the basis of a state of health (soh) of each of multiple storage battery modules constituting the storage battery system. the second remaining life information indicates remaining life of the storage battery system and corresponds to a case where one or more of the multiple storage battery modules are replaced with one or more other storage battery modules. the second remaining life information is calculated on the basis of an soh of each storage battery module not being replaced and an soh of each of the one or more other storage battery modules.
20240088880.ELECTRONIC CIRCUITRY AND POWER CONVERTER_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Satoshi TAKAYA of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Hiroaki ISHIHARA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H03K5/135, H03K5/00
Abstract: according to one embodiment, an electronic circuitry includes a clock generation circuit configured to generate a first clock signal; a first conversion circuit configured to convert an input signal into a first signal having a frequency corresponding to the first clock signal based on the first clock signal; a first electromagnetic field coupler configured to transmit the first signal by electromagnetic field coupling; a second electromagnetic field coupler configured to transmit the first clock signal by electromagnetic field coupling; and a second conversion circuit configured to convert the first signal transmitted by the first electromagnetic field coupler into a second signal having a frequency corresponding to the input signal, based on the first clock signal transmitted by the second electromagnetic field coupler.
Inventor(s): Hirotada FURUTA of Meguro Tokyo (JP) for kabushiki kaisha toshiba
IPC Code(s): H04B3/46
Abstract: according to the present embodiment, a communication device comprises a transmitter and a receiver. the transmitter includes at least a predetermined one of signal values in a binary and is configured to be able to transmit a transmission signal following a first rule via a signal line. the receiver is configured to output a first signal when the transmission signal following the first rule is included in a signal having been received by the receiver via the signal line and to output a second signal indicating that the signal line is valid when the receiver has received a signal having a same value as the signal value.
20240090120.ISOLATOR_simplified_abstract_(kabushiki kaisha toshiba)
Inventor(s): Yoshinari TAMURA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Yusuke IMAIZUMI of Kawasaki Kanagawa (JP) for kabushiki kaisha toshiba, Jia LIU of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Daijo CHIDA of Yokohama Kanagawa (JP) for kabushiki kaisha toshiba, Minoru TAKIZAWA of Sagamihara Kanagawa (JP) for kabushiki kaisha toshiba
IPC Code(s): H05K1/02, H05K1/11, H05K1/16, H05K1/18
Abstract: according to one embodiment, an isolator includes: a first semiconductor chip; a second semiconductor chip; a first wiring board including a first surface provided thereon with the first semiconductor chip; a second wiring board including a second surface provided thereon with the second semiconductor chip, the second wiring board being spaced apart from the first wiring board; a third wiring board spaced apart from each of the first and second wiring boards; a first coil on the first surface; a second coil on the second surface; a third coil on a third surface of the third wiring board, the third surface facing the first and second surfaces, the third coil facing the first coil; a fourth coil on the third surface, facing the second coil, and electrically coupled to the third coil; and an insulator provided between the first to fourth coils.
KABUSHIKI KAISHA TOSHIBA patent applications on March 14th, 2024
- KABUSHIKI KAISHA TOSHIBA
- B01D39/16
- B01D19/00
- B01D39/20
- G01N33/00
- Kabushiki kaisha toshiba
- B22F1/052
- B22F1/065
- B33Y70/00
- B33Y80/00
- B65G43/08
- C07C1/12
- C01B3/06
- C01B13/02
- C01B32/40
- G01F1/74
- G01C19/5656
- G01C19/5663
- G01J1/44
- G01M99/00
- G01N27/22
- G01P15/097
- G01P15/18
- G01S13/56
- G01S7/41
- G01S13/60
- G01S13/87
- G01S13/90
- G05B23/02
- G06F16/28
- G06F40/279
- G06F16/93
- G06F40/216
- G06N5/022
- G06F40/289
- G06F16/245
- G06Q30/0203
- G06F17/16
- G06V10/774
- G06V10/82
- G06V20/70
- G11B5/55
- G11B5/596
- G11B20/12
- H01F27/36
- H01F27/28
- H01F27/32
- H01F38/14
- H01L23/552
- H01L25/16
- H01L21/04
- H01L21/02
- H01L29/16
- H01L29/40
- H01L29/66
- H01L29/78
- H01L21/22
- H01L29/32
- H01L29/739
- H01L23/13
- H01L23/00
- H01L23/492
- H01L23/495
- H01L23/31
- H01L29/417
- H01L29/872
- H01L25/11
- H01L29/20
- H01L29/778
- H01L29/06
- H01L27/06
- H01L29/10
- H01L29/423
- H01L21/324
- H01L33/62
- H01L33/56
- H01M4/04
- H01M10/04
- H01M4/58
- H01M50/296
- H02J7/00
- H01M10/48
- H03K5/135
- H03K5/00
- H04B3/46
- H05K1/02
- H05K1/11
- H05K1/16
- H05K1/18
- H01L29/66068
