International business machines corporation (20240415032). PHASE CHANGE MEMORY CELL
Contents
PHASE CHANGE MEMORY CELL
Organization Name
international business machines corporation
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
PHASE CHANGE MEMORY CELL
This abstract first appeared for US patent application 20240415032 titled 'PHASE CHANGE MEMORY CELL
Original Abstract Submitted
a phase change memory cell includes a portion of a phase change material over a bi-layer heater where the bi-layer heater has a wider bottom portion on a bottom electrode and a narrower top portion of the bi-layer heater under the phase change material. a first dielectric material is inside and directly contacting the bi-layer heater. the first dielectric material surrounds an air gap in the bottom portion of the first dielectric material. the air gap is adjacent to the wider bottom portion of the bi-layer heater. the narrower top portion of the bi-layer heater is between a sidewall of the first dielectric material and a fourth dielectric material. the fourth dielectric material is above a surface of the bottom portion of the bi-layer heater and contacts a sidewall of a third dielectric material. the phase change memory cell includes a top electrode contacting the phase change material.