International business machines corporation (20240321959). BACKSIDE CONTACT FORMATION simplified abstract

BACKSIDE CONTACT FORMATION

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Shogo Mochizuki of Mechanicville NY (US)

Kisik Choi of Watervliet NY (US)

HUIMEI Zhou of Albany NY (US)

Tenko Yamashita of Schenectady NY (US)

BACKSIDE CONTACT FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240321959 titled 'BACKSIDE CONTACT FORMATION

Simplified Explanation: The patent application describes a structure involving an upper portion of a source/drain epitaxy next to channel layers of a nanosheet stack on a substrate, with a lower portion of the source/drain epitaxy below the upper portion. The lower portion has a greater width than the upper portion, with a dielectric fill layer below the nanosheet stack and a dielectric encapsulation liner between the fill layer and the lower portion of the source/drain epitaxy.

Key Features and Innovation:

• Structure involving upper and lower portions of source/drain epitaxy in a nanosheet stack.
• Different widths of the upper and lower portions of the source/drain epitaxy.
• Dielectric fill layer and encapsulation liner for insulation and protection.

Potential Applications: This technology could be applied in semiconductor manufacturing, specifically in the development of advanced nanosheet transistors for high-performance electronic devices.

Problems Solved:

• Improved performance and efficiency of nanosheet transistors.
• Enhanced protection and insulation of source/drain epitaxy layers.

Benefits:

• Higher performance capabilities in electronic devices.
• Increased durability and reliability of nanosheet transistors.

Commercial Applications: Potential commercial applications include the production of faster and more efficient electronic devices, leading to advancements in computing, telecommunications, and other high-tech industries.

Prior Art: Researchers can explore prior patents and scientific literature on nanosheet transistor technology, epitaxy structures, and dielectric materials to understand the background of this innovation.

Frequently Updated Research: Ongoing research in semiconductor materials, nanotechnology, and transistor design may provide further insights into the optimization and application of this technology.

Questions about Nanosheet Transistor Technology: 1. What are the key advantages of using nanosheet transistors compared to traditional transistor designs? 2. How does the width difference between the upper and lower portions of the source/drain epitaxy impact the performance of the nanosheet stack?

Original Abstract Submitted

an upper portion of a source/drain epitaxy adjacent to channel layers of a nanosheet stack on a substrate, a lower portion of the source/drain epitaxy below the upper portion of the source/drain epitaxy, a second width of the lower portion of the source/drain epitaxy is greater than a first width of the upper portion of the source/drain epitaxy, a dielectric fill layer below the nanosheet stack, and a dielectric encapsulation liner between the dielectric fill layer and the lower portion of the source/drain epitaxy. forming an upper portion of a source/drain epitaxy adjacent to semiconductor channel layers of a nanosheet stack, and forming a lower portion of the source/drain epitaxy below the upper portion of the source/drain epitaxy, a second width of the lower portion of the source/drain epitaxy is greater than a first width of the upper portion of the source/drain epitaxy.