International business machines corporation (20240194585). SUPER VIA WITH SIDEWALL SPACER simplified abstract

SUPER VIA WITH SIDEWALL SPACER

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of NIskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Koichi Motoyama of Clifton Park NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Huai Huang of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

SUPER VIA WITH SIDEWALL SPACER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240194585 titled 'SUPER VIA WITH SIDEWALL SPACER

The semiconductor device described in the patent application consists of multiple metallization layers and a super via connecting them, along with an inner spacer layer on the sidewalls of the super via.

• The device includes a first metallization layer.
• A second metallization layer is formed on top of the first metallization layer.
• A third metallization layer is then formed on top of the second metallization layer.
• A super via extends from the first metallization layer to the third metallization layer.
• An inner spacer layer is formed on the sidewalls of the super via, connecting the second metallization layer to the first metallization layer.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of integrated circuits.

Problems Solved: - Enhances the connectivity and signal transmission within the semiconductor device. - Allows for more complex and compact circuit designs.

Benefits: - Improved functionality and reliability of semiconductor devices. - Enables higher levels of integration in electronic components.

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Circuit Performance This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and IoT devices. It can also benefit industries like telecommunications, automotive, and aerospace.

Prior Art: Readers can explore prior patents related to semiconductor device metallization layers and vias to understand the evolution of this technology.

Frequently Updated Research: Researchers are continually exploring new materials and processes to further enhance the performance of semiconductor devices with multiple metallization layers and super vias.

Questions about Semiconductor Device Technology: 1. How does the inner spacer layer contribute to the functionality of the super via? 2. What are the potential challenges in scaling up this technology for mass production?

Original Abstract Submitted

a semiconductor device includes a first metallization layer; a second metallization layer formed on the first metallization layer; a third metallization layer formed on the second metallization layer; a super via extending from the first metallization layer to the third metallization layer; and an inner spacer layer formed on sidewalls of the super via from the second metallization layer to the first metallization layer.