International business machines corporation (20240186245). REDUCED CAPACITANCE BETWEEN POWER VIA BAR AND GATES simplified abstract

REDUCED CAPACITANCE BETWEEN POWER VIA BAR AND GATES

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Kisik Choi of Watervliet NY (US)

Reinaldo Vega of Mahopac NY (US)

Albert M. Chu of Nashua NH (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

REDUCED CAPACITANCE BETWEEN POWER VIA BAR AND GATES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186245 titled 'REDUCED CAPACITANCE BETWEEN POWER VIA BAR AND GATES

Simplified Explanation

The patent application relates to reducing parasitic capacitance of power via bars in semiconductor devices.

• A semiconductor device comprises a field-effect transistor (FET) and a power via bar connected to a backside power rail.
• The power via bar is taller near the source and drain regions of the FET compared to the gate to reduce parasitic capacitance.
• The design helps mitigate parasitic capacitance within the device, improving overall performance.

Potential Applications

This technology can be applied in various semiconductor devices where reducing parasitic capacitance is crucial for performance optimization.

Problems Solved

This innovation addresses the issue of parasitic capacitance in semiconductor devices, which can affect their efficiency and functionality.

Benefits

- Improved performance of semiconductor devices - Enhanced efficiency due to reduced parasitic capacitance

Potential Commercial Applications

The technology can be utilized in the manufacturing of high-performance electronic devices, such as smartphones, computers, and other consumer electronics.

Possible Prior Art

There may be prior art related to techniques for reducing parasitic capacitance in semiconductor devices, but further research is needed to identify specific examples.

How does this technology compare to existing methods for reducing parasitic capacitance in semiconductor devices?

This article does not provide a direct comparison with existing methods for reducing parasitic capacitance. Further research is needed to understand the advantages and limitations of this innovation in comparison to other techniques.

What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?

The article does not address the potential challenges in implementing this technology in mass production. Further investigation is required to determine any obstacles or limitations in scaling up the fabrication process.

Original Abstract Submitted

one or more systems, devices, and/or methods of fabrication provided herein relate to reduced parasitic capacitance of power via bars. according to one embodiment, a semiconductor device can comprise a field-effect transistor (fet), and a power via bar coupled to a backside power rail, wherein the power via bar has greater height adjacent to a source and drain region of the field-effect transistor (fet) relative to a gate of the fet to mitigates parasitic capacitance within the device.