International business machines corporation (20240186219). TRANSISTORS WITH BACKSIDE SOURCE/DRAIN CONTACT AND SPACER simplified abstract
Contents
- 1 TRANSISTORS WITH BACKSIDE SOURCE/DRAIN CONTACT AND SPACER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTORS WITH BACKSIDE SOURCE/DRAIN CONTACT AND SPACER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
TRANSISTORS WITH BACKSIDE SOURCE/DRAIN CONTACT AND SPACER
Organization Name
international business machines corporation
Inventor(s)
Tsung-Sheng Kang of Ballston Lake NY (US)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Chih-Chao Yang of Glenmont NY (US)
TRANSISTORS WITH BACKSIDE SOURCE/DRAIN CONTACT AND SPACER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186219 titled 'TRANSISTORS WITH BACKSIDE SOURCE/DRAIN CONTACT AND SPACER
Simplified Explanation
The semiconductor structure described in the abstract includes a first backside power rail, a first sidewall spacer, and a backside signal line.
- The first backside power rail is located on a portion of a sidewall and the bottom surface of a backside source/drain contact.
- The first sidewall spacer is positioned on another sidewall of the backside source/drain contact.
- The backside signal line is placed on the first sidewall spacer and is separated from the backside source/drain contact.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor structures by providing a more efficient power distribution and signal transmission.
Benefits
The benefits of this technology include enhanced power management, reduced signal interference, and overall improved functionality of semiconductor devices.
Potential Commercial Applications
Potential commercial applications of this technology could include the manufacturing of high-performance electronic devices for various industries such as telecommunications, computing, and automotive.
Possible Prior Art
One possible prior art could be the use of backside power rails in semiconductor structures for power distribution and signal transmission. However, the specific configuration described in this patent application may be a novel improvement in this field.
Unanswered Questions
How does this technology compare to existing semiconductor structures in terms of power efficiency and signal integrity?
This article does not provide a direct comparison with existing semiconductor structures in terms of power efficiency and signal integrity. Further research or testing may be needed to determine the specific advantages of this technology over current solutions.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges in implementing this technology on a large scale for commercial production. Factors such as manufacturing costs, scalability, and compatibility with existing processes could be important considerations in the widespread adoption of this innovation.
Original Abstract Submitted
a semiconductor structure includes a first backside power rail disposed on a portion of a sidewall and a bottom surface of a backside source/drain contact, a first sidewall spacer disposed on another sidewall of the backside source/drain contact, and a backside signal line disposed on the first sidewall spacer and separated from the backside source/drain contact.
