International business machines corporation (20240178142). LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION simplified abstract
Contents
- 1 LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION
Organization Name
international business machines corporation
Inventor(s)
Shravana Kumar Katakam of Lehi UT (US)
Tao Li of Slingerlands NY (US)
Indira Seshadri of Niskayuna NY (US)
Ruilong Xie of Niskayuna NY (US)
LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178142 titled 'LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION
Simplified Explanation
The semiconductor device in this patent application includes two nanodevices, each comprised of multiple transistors, with a power bar located between them. The power bar is connected to the second nanodevice and is in the same plane and at the same height as the second source/drain contact.
- Explanation of the patent/innovation:
- Two nanodevices with multiple transistors each - Power bar located between the nanodevices - Power bar connected to the second nanodevice - Power bar and second source/drain contact in the same plane and at the same height
Potential Applications
This technology could be applied in: - Advanced computing systems - High-speed data processing applications - Nanoelectronics research and development
Problems Solved
This technology helps to: - Improve efficiency of semiconductor devices - Enhance performance of nanodevices - Optimize power distribution in integrated circuits
Benefits
The benefits of this technology include: - Increased speed and reliability of semiconductor devices - Enhanced power management capabilities - Potential for smaller and more efficient electronic devices
Potential Commercial Applications
"Semiconductor Device with Power Bar for Enhanced Performance" could be used in: - Consumer electronics - Telecommunications equipment - Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the use of power bars in traditional integrated circuits to optimize power distribution.
Unanswered Questions
How does this technology compare to existing power distribution methods in semiconductor devices?
This article does not provide a direct comparison to existing power distribution methods in semiconductor devices. It would be helpful to understand the specific advantages and disadvantages of using a power bar in this context.
What impact could this technology have on the overall efficiency of integrated circuits?
The article does not delve into the potential impact of this technology on the overall efficiency of integrated circuits. It would be interesting to explore how the use of a power bar between nanodevices could improve the efficiency of integrated circuits in practical applications.
Original Abstract Submitted
according to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. the first nanodevice includes a first source/drain contact. the second nanodevice includes a second source/drain contact. the second nanodevice is located adjacent to and parallel to the first nanodevice. a power bar is located between the first nanodevice and the second nanodevice. the power bar is connected to the second source/drain contact. a top surface of the power bar and the second source/drain contact are substantially in a same plane. the top surface of the power bar and the second source/drain contact are substantially a same height.
