International business machines corporation (20240178072). NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract
Contents
- 1 NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
Organization Name
international business machines corporation
Inventor(s)
Ruqiang Bao of Niskayuna NY (US)
Dechao Guo of Niskayuna NY (US)
NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178072 titled 'NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS
Simplified Explanation
The abstract of the patent application describes semiconductor devices and methods of forming the same, including transistors with different work function metal layers in different regions.
- The patent application involves the formation of a first transistor in a first region with a first work function metal layer.
- A second transistor is formed in a second region with a second work function metal layer that overlaps a portion of the first work function metal layer.
- The second work function metal layer has a vertical part above the portion of the first work function metal layer.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by optimizing the work function metal layers in different regions of the device.
Benefits
The use of different work function metal layers in different regions of the semiconductor device can enhance its overall performance, speed, and power efficiency.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices with improved functionality and energy efficiency.
Possible Prior Art
One possible prior art in this field could be the use of different metal layers in semiconductor devices to control the work function and performance of transistors.
Unanswered Questions
How does this technology impact the overall cost of semiconductor device production?
The patent application does not provide information on the cost implications of implementing this technology in semiconductor device manufacturing processes.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the potential challenges that may arise when scaling up this technology for mass production in semiconductor manufacturing facilities.
Original Abstract Submitted
semiconductor devices and methods of forming the same include a first transistor in a first region having a first work function metal layer. a second transistor in a second region has a second work function metal layer that overlaps a portion of the first work function metal layer and that has a vertical part above the portion of the first work function metal layer.
