Intel corporation (20240234422). STACKED FORKSHEET TRANSISTORS simplified abstract

STACKED FORKSHEET TRANSISTORS

Organization Name

intel corporation

Inventor(s)

Cheng-Ying Huang of Portland OR (US)

Gilbert Dewey of Beaverton OR (US)

Anh Phan of Beaverton OR (US)

Nicole K. Thomas of Portland OR (US)

Urusa Alaan of Hillsboro OR (US)

Seung Hoon Sung of Portland OR (US)

Christopher M. Neumann of Portland OR (US)

Willy Rachmady of Beaverton OR (US)

Patrick Morrow of Portland OR (US)

Hui Jae Yoo of Portland OR (US)

Richard E. Schenker of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Jack T. Kavalieros of Portland OR (US)

Ehren Mannebach of Beaverton OR (US)

STACKED FORKSHEET TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240234422 titled 'STACKED FORKSHEET TRANSISTORS

The abstract of this patent application describes the invention of stacked forksheet transistor devices and methods of fabricating them in an integrated circuit structure.

• The integrated circuit structure includes a backbone, with a first transistor device having a vertical stack of semiconductor channels adjacent to the backbone's edge.
• A second transistor device is also present, with a vertical stack of semiconductor channels adjacent to the same edge of the backbone, and it is stacked on top of the first transistor device.

Key Features and Innovation:

• Stacked forksheet transistor devices in an integrated circuit structure.
• Fabrication methods for creating these devices.
• Utilization of vertical stacks of semiconductor channels for improved performance.

Potential Applications:

• Advanced semiconductor technology.
• High-performance computing.
• Mobile devices and smartphones.

Problems Solved:

• Enhancing transistor device performance.
• Increasing efficiency in integrated circuit structures.

Benefits:

• Improved speed and efficiency in electronic devices.
• Higher performance capabilities.
• Potential for smaller and more powerful devices.

Commercial Applications:

• Semiconductor manufacturing industry.
• Electronics and technology companies.
• Research and development in the semiconductor field.

Questions about Stacked Forksheet Transistor Devices: 1. How do stacked forksheet transistor devices differ from traditional transistor structures? 2. What are the specific advantages of using vertical stacks of semiconductor channels in these devices?

Frequently Updated Research: Ongoing research in semiconductor technology and integrated circuit design may provide further advancements in stacked forksheet transistor devices and their fabrication methods.

Original Abstract Submitted

embodiments disclosed herein include stacked forksheet transistor devices, and methods of fabricating stacked forksheet transistor devices. in an example, an integrated circuit structure includes a backbone. a first transistor device includes a first vertical stack of semiconductor channels adjacent to an edge of the backbone. a second transistor device includes a second vertical stack of semiconductor channels adjacent to the edge of the backbone. the second transistor device is stacked on the first transistor device.