Intel corporation (20240222073). ION BEAM LITHOGRAPHY AND NANOENGINEERING simplified abstract
Contents
ION BEAM LITHOGRAPHY AND NANOENGINEERING
Organization Name
Inventor(s)
Brandon Holybee of Portland OR (US)
Kirby Maxey of Hillsboro OR (US)
Kevin O'brien of Portland OR (US)
Mahmut Sami Kavrik of Eugene OR (US)
ION BEAM LITHOGRAPHY AND NANOENGINEERING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222073 titled 'ION BEAM LITHOGRAPHY AND NANOENGINEERING
The abstract describes a method for ion beam fabrication of materials with 2D characteristics on a wafer assembly.
- Device overlays wafer assembly with top layer of 2D material using ion beam.
- Ion beam is tuned to modify material characteristics or perform milling of layers.
- Targeted regions of top layer or resist layer are treated with ion beam.
- Energy range or dosing level of ions is predetermined for ion beam tuning.
Potential Applications: - Semiconductor manufacturing - Nanotechnology research - Advanced materials development
Problems Solved: - Enhancing material characteristics - Precision milling of layers - Improving fabrication processes
Benefits: - Increased efficiency in material fabrication - Enhanced control over material properties - Potential for new applications in electronics and optics
Commercial Applications: Title: Advanced Ion Beam Fabrication for Semiconductor Industry This technology could revolutionize semiconductor manufacturing processes, leading to faster production times and more precise control over material properties. The market implications include increased competitiveness for companies adopting this innovative fabrication method.
Questions about Ion Beam Fabrication: 1. How does ion beam tuning impact the material characteristics of the resist layer?
- The ion beam tuning modifies the resist layer's properties, allowing for precise control over the material's behavior during fabrication.
2. What are the potential challenges in implementing ion beam fabrication on a large scale?
- Scaling up ion beam fabrication may require significant investment in equipment and process optimization to ensure consistent results.
Original Abstract Submitted
this disclosure describes systems, apparatus, methods, and devices related to ion beams fabrication. a device may overlay a wafer assembly of one or more layers with a top layer comprised of a material having 2d material characteristics. the device may be fabricated by applying an ion beam targeted to at least one of one or more regions of the top layer or a resist layer placed on top of the top layer, wherein the ion beam is tuned using a predetermined energy range or a dosing level of ions to modify material characteristics of the resist layer or to perform milling of the top layer or other layers of the one or more layers of the wafer assembly.
