Hyundai motor company (20240315046). TWO-TERMINAL MEMORY DEVICE simplified abstract
Contents
TWO-TERMINAL MEMORY DEVICE
Organization Name
Inventor(s)
Jong-Seok Lee of Suwon-si (KR)
Sang-Hyeok Yang of Suwon-si (KR)
TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240315046 titled 'TWO-TERMINAL MEMORY DEVICE
The patent application describes a two-terminal memory device consisting of a substrate, an extended drain connected to a drain and the substrate, a ferroelectric layer covering the extended drain and the substrate, and a source laminated on the ferroelectric layer facing the drain.
- The memory device includes an extended drain that extends from a drain and the lower surface of the drain.
- A ferroelectric layer is connected to the drain and covers both the extended drain and the substrate.
- The source is laminated on the ferroelectric layer to face the drain.
Potential Applications: - Memory storage devices - Non-volatile memory technology - Integrated circuits
Problems Solved: - Enhanced memory storage capabilities - Improved data retention - Increased efficiency in memory devices
Benefits: - Higher performance in memory devices - Increased data security - Enhanced reliability in data storage
Commercial Applications: Title: "Innovative Two-Terminal Memory Device for Advanced Data Storage Solutions" This technology can be utilized in various industries such as electronics, telecommunications, and computing for developing advanced memory storage solutions.
Questions about the technology: 1. How does the ferroelectric layer contribute to the memory device's performance? The ferroelectric layer enhances the memory device's data retention capabilities by storing information in a non-volatile manner. 2. What advantages does the extended drain provide in the memory device's operation? The extended drain allows for improved connectivity and efficiency in data storage processes.
Original Abstract Submitted
a two-terminal memory device includes: a substrate; an extended drain extending from a drain and a lower surface of the drain and laminated on the substrate; a ferroelectric layer connected to the drain and covering the extended drain and the substrate; and a source laminated on the ferroelectric layer to face the drain.
