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Category:Kangguo Cheng of Schenectady NY (US)
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Pages in category "Kangguo Cheng of Schenectady NY (US)"
The following 82 pages are in this category, out of 82 total.
1
- 17455937. REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17457686. METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17519924. PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT simplified abstract (International Business Machines Corporation)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17524851. SHORT GATE ON ACTIVE AND LONGER GATE ON STI FOR NANOSHEETS simplified abstract (International Business Machines Corporation)
- 17528391. VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17529215. TUNABLE TRUE RANDOM NUMBER GENERATOR simplified abstract (International Business Machines Corporation)
- 17531149. REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17540315. STACKED NANOSHEET TRANSISTOR WITH DEFECT FREE CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17541879. SEMICONDUCTOR STRUCTURES WITH LOW TOP CONTACT RESISTANCE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545327. ENABLING DEVICE SECURITY BY DESIGN ENUMERATION SELECTIVE TARGETING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545635. STACKED CROSS-POINT PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545713. NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547152. MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551686. SELF-ALIGNED GATE CONTACT FOR VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643202. LINER-LESS VIA CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644100. SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644466. SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806514. SQUARE-SHAPED CONTACT WITH IMPROVED ELECTRICAL CONDUCTIVITY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17849639. FORMING A FORKSHEET NANODEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17937431. POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract (International Business Machines Corporation)
- 17938667. MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract (International Business Machines Corporation)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation)
- 17957194. HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (International Business Machines Corporation)
- 17961774. HIGH DENSITY TRENCH CAPACITOR simplified abstract (International Business Machines Corporation)
- 18060003. LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18065860. STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract (International Business Machines Corporation)
- 18065923. TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS simplified abstract (International Business Machines Corporation)
- 18072675. PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18097185. HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT simplified abstract (International Business Machines Corporation)
- 18145840. DECOUPLING MIM CAPACITOR simplified abstract (International Business Machines Corporation)
- 18146344. MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract (International Business Machines Corporation)
- 18147129. SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18186229. STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188729. PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
I
- International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
- International business machines corporation (20240096946). DUAL DIELECTRIC STRESSORS simplified abstract
- International business machines corporation (20240096949). DIODES IN NANOSHEET TECHNOLOGY simplified abstract
- International business machines corporation (20240096983). SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract
- International business machines corporation (20240107900). PHASE CHANGE MEMORY CELL SIDEWALL HEATER simplified abstract
- International business machines corporation (20240113117). VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract
- International business machines corporation (20240113125). POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract
- International business machines corporation (20240113213). HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract
- International business machines corporation (20240120369). HIGH DENSITY TRENCH CAPACITOR simplified abstract
- International business machines corporation (20240121966). MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract
- International business machines corporation (20240128318). SEMICONDUCTOR STRUCTURE WITH FULLY WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128331). BOTTOM ENHANCED LINER-LESS VIA CONTACT FOR REDUCED MOL RESISTANCE simplified abstract
- International business machines corporation (20240128334). SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract
- International business machines corporation (20240130142). RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS simplified abstract
- International business machines corporation (20240130256). PHASE CHANGE MEMORY CELL WITH HEATER simplified abstract
- International business machines corporation (20240178136). LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract
- International business machines corporation (20240180047). PHASE CHANGE MEMORY simplified abstract
- International business machines corporation (20240186325). STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE simplified abstract
- International business machines corporation (20240186387). VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL simplified abstract
- International business machines corporation (20240188282). STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS simplified abstract
- International business machines corporation (20240202305). TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS simplified abstract
- International business machines corporation (20240203990). STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract
- International business machines corporation (20240213141). DECOUPLING MIM CAPACITOR simplified abstract
- International business machines corporation (20240215462). MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract
- International business machines corporation (20240224819). SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract
- International business machines corporation (20240242012). HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT simplified abstract
- International business machines corporation (20240324475). PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract
- International business machines corporation (20240324476). STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract
- International business machines corporation (20240415032). PHASE CHANGE MEMORY CELL
