Category:Juntao Li of Cohoes NY (US)
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Juntao Li
Juntao Li from Cohoes NY (US) has applied for patents in technology areas such as H01L27/12, H01L21/8234, H01L21/84 with international business machines corporation.
Patents
Pages in category "Juntao Li of Cohoes NY (US)"
The following 52 pages are in this category, out of 52 total.
1
- 17519924. PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17541879. SEMICONDUCTOR STRUCTURES WITH LOW TOP CONTACT RESISTANCE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545635. STACKED CROSS-POINT PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547152. MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644466. SELF-ALIGNED, SYMMETRIC PHASE CHANGE MEMORY ELEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17948877. NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract (International Business Machines Corporation)
- 18059093. SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18064260. PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE simplified abstract (International Business Machines Corporation)
- 18065117. EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18066671. STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP simplified abstract (International Business Machines Corporation)
- 18067127. LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 18068570. GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18072675. PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18089655. BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18089670. FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18112020. MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE MEMORY DEVICES simplified abstract (International Business Machines Corporation)
- 18145034. STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 18146344. MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract (International Business Machines Corporation)
- 18183189. METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSITION simplified abstract (International Business Machines Corporation)
- 18188496. CONTACT CUT AND WRAP AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188729. PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18300421. SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG simplified abstract (International Business Machines Corporation)
- 18344838. SRAM FORMATION FOR VERTICAL FET TRANSISTOR WITH BACKSIDE CONTACT (International Business Machines Corporation)
- 18452682. NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION (International Business Machines Corporation)
I
- International business machines corporation (20240096891). SELF-ALIGNED BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240096952). NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS simplified abstract
- International business machines corporation (20240107900). PHASE CHANGE MEMORY CELL SIDEWALL HEATER simplified abstract
- International business machines corporation (20240130256). PHASE CHANGE MEMORY CELL WITH HEATER simplified abstract
- International business machines corporation (20240178156). SUPPORT DIELECTRIC FIN TO PREVENT GATE FLOP-OVER IN NANOSHEET TRANSISTORS simplified abstract
- International business machines corporation (20240180047). PHASE CHANGE MEMORY simplified abstract
- International business machines corporation (20240194677). PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE simplified abstract
- International business machines corporation (20240196627). EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240203879). LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240203992). GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract
- International business machines corporation (20240204008). STRUCTURE AND METHOD TO FORM VIA TO BACKSIDE POWER RAIL WITHOUT SHORTING TO GATE TIP simplified abstract
- International business machines corporation (20240213248). STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract
- International business machines corporation (20240215462). MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract
- International business machines corporation (20240222227). BACKSIDE CONTACTS FOR STACKED FIELD EFFECT TRANSISTORS simplified abstract
- International business machines corporation (20240224539). FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract
- International business machines corporation (20240284687). MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE MEMORY DEVICES simplified abstract
- International business machines corporation (20240313070). METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSITION simplified abstract
- International business machines corporation (20240321645). CONTACT CUT AND WRAP AROUND CONTACT simplified abstract
- International business machines corporation (20240324475). PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract
- International business machines corporation (20240332082). STACKED ELECTRONIC DEVICES HAVING INDEPENDENT GATES simplified abstract
- International business machines corporation (20240347533). SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG simplified abstract
- International business machines corporation (20240415032). PHASE CHANGE MEMORY CELL
- International business machines corporation (20240429096). GATE CUT OF SELF-ALIGNED CONTACT POST REPLACEMENT METAL GATE
- International business machines corporation (20240429280). INTEGRATED TRANSISTOR HAVING AN OVER-THE-CHANNEL ETCH-STOP ISOLATION REGION
- International business machines corporation (20250072116). NANOSHEET BASED EXTENDED-GATE DEVICE INTEGRATION
