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Category:Hai-Dang Trinh of Hsinchu (TW)
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Pages in category "Hai-Dang Trinh of Hsinchu (TW)"
The following 12 pages are in this category, out of 12 total.
1
- 17838994. DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17849930. MIM CAPACITOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18149274. PHASE CHANGE MATERIAL (PCM) SWITCH HAVING LOW HEATER RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18403014. RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18603313. RRAM STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240099022). PHASE CHANGE MATERIAL (PCM) SWITCH HAVING LOW HEATER RESISTANCE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224822). RRAM STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240138272). RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240203472). CIRCUIT DESIGN AND LAYOUT WITH HIGH EMBEDDED MEMORY DENSITY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381663). INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381664). Ferroelectric Memory Device and Method of Manufacturing the Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381793). OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE simplified abstract
