Category:H10N70/20

From WikiPatents

Jump to navigation Jump to search

There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.

Pages in category "H10N70/20"

The following 132 pages are in this category, out of 132 total.

1

18071740. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
18080721. MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract (International Business Machines Corporation)
18105935. PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18146344. MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract (International Business Machines Corporation)
18150884. PHASE-CHANGE MEMORY DEVICE WITH TAPERED THERMAL TRANSFER LAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
18156734. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18171380. PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH NOVEL SPREADER DESIGN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18177397. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18188729. PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18223043. RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (UNITED MICROELECTRONICS CORP.)
18231750. PHASE CHANGE RANDOM ACCESS MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18236651. VARIABLE RESISTANCE MATERIAL AND VARIABLE RESISTANCE MEMORY DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
18261223. SWITCH DEVICE AND MEMORY UNIT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
18298132. HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
18299811. NEUROMORPHIC MEMORY ELEMENT SIMULTANEOUSLY IMPLEMENTING VOLATILE AND NON-VOLATILE FEATURE FOR EMULATION OF NEURON AND SYNAPSE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
18303692. PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL DISSIPATION AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
18304601. PHASE CHANGE MATERIAL RADIO-FREQUENCY SWITCH FOR LOW POWER CONSUMPTION AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
18396275. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
18403014. RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18409413. LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract (MICRON TECHNOLOGY, INC.)
18455815. SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
18515226. MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
18521109. MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18582308. MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Nanyang Technological University)
18582551. MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18583864. SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18586657. MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18590813. ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE simplified abstract (SK hynix Inc.)
18597816. MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18602721. PHASE CHANGE STORAGE UNIT AND PHASE CHANGE MEMORY simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
18603313. RRAM STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18616989. SOCKET DESIGN FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
18617007. MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES simplified abstract (Micron Technology, Inc.)
18617466. ARCHITECTURE FOR MULTIDECK MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
18637552. 3D Stackable Memory and Methods of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18650104. MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18661902. MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18669541. MEMORY DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
18671947. MEMORY DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
18732725. RRAM BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18813539. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)

B

Blockchain patent applications on April 11th, 2024

H

I

M

S

T

U

Retrieved from "http://wikipatents.org/index.php?title=Category:H10N70/20"