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Category:H10N70/00
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Pages in category "H10N70/00"
The following 200 pages are in this category, out of 220 total.
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- 18060884. SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE simplified abstract (SK hynix Inc.)
- 18068758. TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY simplified abstract (International Business Machines Corporation)
- 18071740. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18080721. MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract (International Business Machines Corporation)
- 18105935. PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18133304. METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM simplified abstract (International Business Machines Corporation)
- 18146344. MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract (International Business Machines Corporation)
- 18147129. SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18150863. PHASE-CHANGE DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18150884. PHASE-CHANGE MEMORY DEVICE WITH TAPERED THERMAL TRANSFER LAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18156543. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18156734. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18162299. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18164926. MEMORY DEVICE AND MEMORY APPARATUS COMPRISING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18166479. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18167354. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18171380. PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH NOVEL SPREADER DESIGN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18173815. RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18177397. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18186229. STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188729. PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18214755. VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18223043. RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (UNITED MICROELECTRONICS CORP.)
- 18231750. PHASE CHANGE RANDOM ACCESS MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18236651. VARIABLE RESISTANCE MATERIAL AND VARIABLE RESISTANCE MEMORY DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)
- 18261223. SWITCH DEVICE AND MEMORY UNIT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18298132. HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18299811. NEUROMORPHIC MEMORY ELEMENT SIMULTANEOUSLY IMPLEMENTING VOLATILE AND NON-VOLATILE FEATURE FOR EMULATION OF NEURON AND SYNAPSE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18303692. PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL DISSIPATION AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18304551. PHASE CHANGE MATERIAL RADIO-FREQUENCY DEVICE AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18304601. PHASE CHANGE MATERIAL RADIO-FREQUENCY SWITCH FOR LOW POWER CONSUMPTION AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18340253. Phase Change Material In An Electronic Switch Having A Flat Profile simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18344723. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK Hynix Inc.)
- 18345817. METHOD FOR FABRICATING SELECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK Hynix Inc.)
- 18347418. SEMICONDUTOR DEVICE simplified abstract (SK hynix Inc.)
- 18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18365726. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18396275. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18402552. VERTICAL MEMORY DEVICE INCLUDING SELECTOR WITH VARIABLE RESISTIVE MATERIAL (SAMSUNG ELECTRONICS CO., LTD.)
- 18403014. RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18409413. LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract (MICRON TECHNOLOGY, INC.)
- 18419190. SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18423769. Phase-Change Memory Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18448486. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18455815. SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18460437. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515226. MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18521109. MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18545636. MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18582308. MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Nanyang Technological University)
- 18582551. MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18583864. SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18586657. MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18590813. ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE simplified abstract (SK hynix Inc.)
- 18593589. STORAGE DEVICE AND METHOD OF MANUFACTURING A STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18594355. SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18597816. MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18602721. PHASE CHANGE STORAGE UNIT AND PHASE CHANGE MEMORY simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18603313. RRAM STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18615936. NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18616989. SOCKET DESIGN FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18617007. MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18624983. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18631666. MEMORY DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18637552. 3D Stackable Memory and Methods of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18650104. MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18661902. MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669541. MEMORY DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671947. MEMORY DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18732725. RRAM BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18735715. RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18738675. MEMORY CIRCUIT COMPRISING ELECTRONIC CELLS AND A CONTROL CIRCUIT (STMicroelectronics International N.V.)
- 18756838. PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18813539. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18815624. MEMORY DEVICES INCLUDING NON-VOLATILE MEMORY CELLS, AND RELATED MICROELECTRONIC DEVICES (Micron Technology, Inc.)
H
- Huawei technologies co., ltd. (20240114808). PHASE-CHANGE STORAGE UNIT, PHASE-CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD simplified abstract
- Huawei technologies co., ltd. (20240130253). PHASE CHANGE MEMORY, ELECTRONIC DEVICE, AND PREPARATION METHOD FOR PHASE CHANGE MEMORY simplified abstract
- Huawei technologies co., ltd. (20240268242). PHASE CHANGE STORAGE UNIT AND PHASE CHANGE MEMORY simplified abstract
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 18th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 4th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on August 8th, 2024
I
- International business machines corporation (20240188455). PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE simplified abstract
- International business machines corporation (20240196628). MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract
- International business machines corporation (20240206352). TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY simplified abstract
- International business machines corporation (20240215462). MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract
- International business machines corporation (20240224819). SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract
- International business machines corporation (20240324475). PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract
- International business machines corporation (20240324476). STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract
- International business machines corporation (20240349631). METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM simplified abstract
- International business machines corporation (20240415032). PHASE CHANGE MEMORY CELL
- International Business Machines Corporation patent applications on December 12th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 4th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
- International Business Machines Corporation patent applications on June 20th, 2024
- International Business Machines Corporation patent applications on June 27th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- International Business Machines Corporation patent applications on October 17th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on September 26th, 2024
K
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- Micron technology, inc. (20240186234). Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells simplified abstract
- Micron technology, inc. (20240196765). MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS simplified abstract
- Micron technology, inc. (20240224825). LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract
- Micron technology, inc. (20240268240). PROTECTIVE SEALANT FOR CHALCOGENIDE MATERIAL AND METHODS FOR FORMING THE SAME simplified abstract
- Micron technology, inc. (20240292766). CHALCOGENIDE MEMORY DEVICE COMPOSITIONS simplified abstract
- Micron technology, inc. (20240298553). SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES simplified abstract
- Micron technology, inc. (20240315150). MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES simplified abstract
- Micron technology, inc. (20240347107). SOCKET DESIGN FOR A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240422993). MEMORY DEVICES INCLUDING NON-VOLATILE MEMORY CELLS, AND RELATED MICROELECTRONIC DEVICES
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on December 19th, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
- MICRON TECHNOLOGY, INC. patent applications on July 4th, 2024
- Micron Technology, Inc. patent applications on June 13th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on October 17th, 2024
- Micron Technology, Inc. patent applications on September 19th, 2024
- Micron Technology, Inc. patent applications on September 5th, 2024
S
- Samsung electronics co., ltd. (20240196763). VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240237564). VARIABLE RESISTANCE MATERIAL AND VARIABLE RESISTANCE MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240324246). SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240414926). SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
- Samsung electronics co., ltd. (20240421081). MEMORY DEVICE
- Samsung electronics co., ltd. (20240422991). VERTICAL MEMORY DEVICE INCLUDING SELECTOR WITH VARIABLE RESISTIVE MATERIAL
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- Sk hynix inc. (20240251571). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240251687). ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE simplified abstract
- Sk hynix inc. (20240315151). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Sk hynix inc. (20240339135). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240341206). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- SK hynix Inc. patent applications on July 25th, 2024
- SK hynix Inc. patent applications on October 10th, 2024
- SK hynix Inc. patent applications on September 19th, 2024
- Sony semiconductor solutions corporation (20240324479). SWITCH DEVICE AND MEMORY UNIT simplified abstract
- Sony semiconductor solutions corporation (20240415033). STORAGE ELEMENT AND STORAGE DEVICE
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION patent applications on December 12th, 2024
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION patent applications on September 26th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240099025). MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240130252). THERMAL BARRIER STRUCTURE IN PHASE CHANGE MATERIAL DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240164223). Phase-Change Memory Device and Method simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240164225). RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240188453). Generating Self-Aligned Heater for PCRAM Using Filaments simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240188454). METAL LANDING ON TOP ELECTRODE OF RRAM simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240196762). MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240196764). SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224822). RRAM STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315152). MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240315153). MEMORY DEVICE AND FORMATION METHOD THEREOF simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on February 1st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 4th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 13th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 6th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240107903). MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240112987). SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240138272). RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240179923). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240215463). MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240237357). NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240237560). PHASE-CHANGE MEMORY DEVICE WITH TAPERED THERMAL TRANSFER LAYER simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240244850). MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240260278). NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240260279). MEMORY ARRAY WITH ASYMMETRIC BIT-LINE ARCHITECTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240268128). 3D Stackable Memory and Methods of Manufacture simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240284808). PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH NOVEL SPREADER DESIGN simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240284809). MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240296885). MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240298555). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324474). RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240324478). RRAM BOTTOM ELECTRODE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240341204). HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240341205). Phase Change Material In An Electronic Switch Having A Flat Profile simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240349630). PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381791). MEMORY STACKS AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381793). OXYGEN AFFINITY LAYER TO IMPROVE RRAM CELL PERFORMANCE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381795). INTERCALATED METAL/DIELECTRIC STRUCTURE FOR NONVOLATILE MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381797). MEMORY DEVICE STRUCTURE FOR REDUCING THERMAL CROSSTALK simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
