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Category:H10B63/00
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Pages in category "H10B63/00"
The following 200 pages are in this category, out of 272 total.
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- 17911043. TEMPORAL KERNEL DEVICES, TEMPORAL KERNEL COMPUTING SYSTEMS, AND METHODS OF THEIR OPERATION simplified abstract (SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION)
- 18060884. SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE simplified abstract (SK hynix Inc.)
- 18065117. EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18068758. TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY simplified abstract (International Business Machines Corporation)
- 18069769. RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE simplified abstract (International Business Machines Corporation)
- 18071740. VARIABLE RESISTANCE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18080721. MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract (International Business Machines Corporation)
- 18105935. PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18116475. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18133304. METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM simplified abstract (International Business Machines Corporation)
- 18146344. MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract (International Business Machines Corporation)
- 18147129. SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18152122. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152770. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156543. VERTICAL NONVOLATILE MEMORY DEVICE INCLUDING MEMORY CELL STRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18156734. MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18162299. SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18164926. MEMORY DEVICE AND MEMORY APPARATUS COMPRISING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18166479. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18167354. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18171283. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18173815. RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH IMPROVED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18179895. NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
- 18186229. STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18214755. VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18215280. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18223043. RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF (UNITED MICROELECTRONICS CORP.)
- 18231750. PHASE CHANGE RANDOM ACCESS MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18236651. VARIABLE RESISTANCE MATERIAL AND VARIABLE RESISTANCE MEMORY DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)
- 18261223. SWITCH DEVICE AND MEMORY UNIT simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18299608. CHALCOGENIDE MATERIAL AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK hynix Inc.)
- 18299811. NEUROMORPHIC MEMORY ELEMENT SIMULTANEOUSLY IMPLEMENTING VOLATILE AND NON-VOLATILE FEATURE FOR EMULATION OF NEURON AND SYNAPSE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18315381. SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK simplified abstract (SK hynix Inc.)
- 18331519. SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18336791. BACK END DIELECTRIC-BASED MEMORY STRUCTURE IN A SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18344723. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK Hynix Inc.)
- 18345817. METHOD FOR FABRICATING SELECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK Hynix Inc.)
- 18346634. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18347418. SEMICONDUTOR DEVICE simplified abstract (SK hynix Inc.)
- 18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18365726. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18391122. SINGLE PLUG FLOW FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18396275. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18402552. VERTICAL MEMORY DEVICE INCLUDING SELECTOR WITH VARIABLE RESISTIVE MATERIAL (SAMSUNG ELECTRONICS CO., LTD.)
- 18403014. RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE DOPANTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18407074. IMPROVED VERTICAL 3D MEMORY DEVICE AND ACCESSING METHOD simplified abstract (Micron Technology, Inc.)
- 18409413. LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract (MICRON TECHNOLOGY, INC.)
- 18417830. THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 18419190. SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18444520. PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
- 18447196. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18447824. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18448486. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18455815. SELECTIVE ENCAPSULATION FOR METAL ELECTRODES OF EMBEDDED MEMORY DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18460437. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
- 18477068. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH THIN FILM TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18516521. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519964. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS simplified abstract (Micron Technology, Inc.)
- 18521109. MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526031. MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18545082. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18582308. MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Nanyang Technological University)
- 18582551. MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18583864. SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18586255. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18586657. MEMORY DEVICE FOR REDUCING THERMAL CROSSTALK simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18587606. METHOD OF MANUFACTURING AN ELECTRONIC CHIP COMPRISING A MEMORY CIRCUIT simplified abstract (STMicroelectronics International N.V.)
- 18590813. ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE simplified abstract (SK hynix Inc.)
- 18593589. STORAGE DEVICE AND METHOD OF MANUFACTURING A STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18594355. SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18595281. MICROELECTRONIC DEVICES WITH ISOLATION TRENCHES IN UPPER PORTIONS OF TIERED STACKS, AND RELATED METHODS simplified abstract (Lodestar Licensing Group LLC)
- 18595323. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18597816. MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18603313. RRAM STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18614750. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18615936. NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18616989. SOCKET DESIGN FOR A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18617007. MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18617466. ARCHITECTURE FOR MULTIDECK MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 18623909. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18624983. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18631666. MEMORY DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18637552. 3D Stackable Memory and Methods of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18650104. MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18652079. Assemblies having Conductive Interconnects which are Laterally and Vertically Offset Relative to One Another simplified abstract (Micron Technology, Inc.)
- 18653689. SEMICONDUCTOR MEMORY DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18661902. MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18665005. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18665572. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18669541. MEMORY DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18674180. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18732725. RRAM BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18735715. RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18738675. MEMORY CIRCUIT COMPRISING ELECTRONIC CELLS AND A CONTROL CIRCUIT (STMicroelectronics International N.V.)
- 18813539. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18815521. 3D STACKED INTEGRATED CIRCUITS HAVING FAILURE MANAGEMENT (Micron Technology, Inc.)
- 18815624. MEMORY DEVICES INCLUDING NON-VOLATILE MEMORY CELLS, AND RELATED MICROELECTRONIC DEVICES (Micron Technology, Inc.)
- 18816855. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE (SK hynix Inc.)
B
I
- Intel corporation (20240234579). PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICATION simplified abstract
- Intel Corporation patent applications on July 11th, 2024
- International business machines corporation (20240188455). PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE simplified abstract
- International business machines corporation (20240196627). EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240196628). MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract
- International business machines corporation (20240206352). TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY simplified abstract
- International business machines corporation (20240215266). RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE simplified abstract
- International business machines corporation (20240215462). MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract
- International business machines corporation (20240224819). SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL simplified abstract
- International business machines corporation (20240324476). STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL simplified abstract
- International business machines corporation (20240349631). METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM simplified abstract
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 4th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
- International Business Machines Corporation patent applications on June 20th, 2024
- International Business Machines Corporation patent applications on June 27th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
- International Business Machines Corporation patent applications on October 17th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on September 26th, 2024
K
- Kioxia corporation (20240099027). NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD simplified abstract
- Kioxia corporation (20240315052). SEMICONDUCTOR STORAGE DEVICE simplified abstract
- Kioxia corporation (20240324477). STORAGE DEVICE AND METHOD OF MANUFACTURING A STORAGE DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
- Kioxia Corporation patent applications on September 19th, 2024
- Kioxia Corporation patent applications on September 26th, 2024
M
- Micron technology, inc. (20240186234). Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells simplified abstract
- Micron technology, inc. (20240188308). MEMORY CELL PROTECTIVE LAYERS IN A THREE-DIMENSIONAL MEMORY ARRAY simplified abstract
- Micron technology, inc. (20240224825). LOW RESISTANCE CROSSPOINT ARCHITECTURE simplified abstract
- Micron technology, inc. (20240237358). IMPROVED VERTICAL 3D MEMORY DEVICE AND ACCESSING METHOD simplified abstract
- Micron technology, inc. (20240237360). ARCHITECTURE FOR MULTIDECK MEMORY ARRAYS simplified abstract
- Micron technology, inc. (20240237364). THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract
- Micron technology, inc. (20240268127). CROSS POINT ARRAY ARCHITECTURE FOR MULTIPLE DECKS simplified abstract
- Micron technology, inc. (20240282702). Assemblies having Conductive Interconnects which are Laterally and Vertically Offset Relative to One Another simplified abstract
- Micron technology, inc. (20240292632). CROSS-POINT MEMORY ARRAY WITH ACCESS LINES simplified abstract
- Micron technology, inc. (20240292766). CHALCOGENIDE MEMORY DEVICE COMPOSITIONS simplified abstract
- Micron technology, inc. (20240298553). SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES simplified abstract
- Micron technology, inc. (20240315150). MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES simplified abstract
- Micron technology, inc. (20240347107). SOCKET DESIGN FOR A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240421823). 3D STACKED INTEGRATED CIRCUITS HAVING FAILURE MANAGEMENT
- Micron technology, inc. (20240422993). MEMORY DEVICES INCLUDING NON-VOLATILE MEMORY CELLS, AND RELATED MICROELECTRONIC DEVICES
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on December 19th, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
- Micron Technology, Inc. patent applications on July 11th, 2024
- MICRON TECHNOLOGY, INC. patent applications on July 4th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on October 17th, 2024
- Micron Technology, Inc. patent applications on September 19th, 2024
- Micron Technology, Inc. patent applications on September 5th, 2024
S
- Samsung electronics co., ltd. (20240107778). PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240107779). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240164116). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240188305). MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240196763). VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240237564). VARIABLE RESISTANCE MATERIAL AND VARIABLE RESISTANCE MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract
- Samsung electronics co., ltd. (20240260280). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240306400). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324246). SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240414926). SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
- Samsung electronics co., ltd. (20240421081). MEMORY DEVICE
- Samsung electronics co., ltd. (20240422991). VERTICAL MEMORY DEVICE INCLUDING SELECTOR WITH VARIABLE RESISTIVE MATERIAL
- Samsung electronics co., ltd. (20240422994). SEMICONDUCTOR MEMORY DEVICE
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 15th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 6th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 6th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
- Sk hynix inc. (20240121953). SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240179921). CHALCOGENIDE MATERIAL AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
- Sk hynix inc. (20240179926). SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH METAL-ORGANIC FRAMEWORK simplified abstract
- Sk hynix inc. (20240251557). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240251569). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Sk hynix inc. (20240251571). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240251687). ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE simplified abstract
- Sk hynix inc. (20240315029). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240315151). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Sk hynix inc. (20240339135). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240341104). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240341105). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract
- Sk hynix inc. (20240341206). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
