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Category:H01L27/11556
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Pages in category "H01L27/11556"
The following 73 pages are in this category, out of 73 total.
1
- 17690154. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17702137. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17703130. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17704701. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17712238. SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17720376. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17721574. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17729477. SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17747412. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17805009. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17805221. MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)
- 17806902. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17815915. ISOLATION REGIONS WITHIN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17816505. TECHNIQUES FOR CONCURRENTLY-FORMED CAVITIES IN THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 17816651. VERTICAL NON-VOLATILE MEMORY WITH LOW RESISTANCE SOURCE CONTACT simplified abstract (Micron Technology, Inc.)
- 17819330. SEMICONDUCTOR MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING THE SAME AND FABRICATING METHODS OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17822101. MICROELECTRONIC DEVICES WITH A TIERED STACK OF CONDUCTIVE, INSULATIVE, AND PARTIALLY-SACRIFICIAL STRUCTURES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17822421. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17823276. ELECTRONIC DEVICES COMPRISING BLOCKING REGIONS, AND RELATED ELECTRONIC SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17829011. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17830108. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17835080. SEMICONDUCTOR DEVICE INCLUDING A NONVOLATILE VERTICAL MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17838384. THREE-DIMENSIONAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17846158. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17848021. MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS simplified abstract (Micron Technology, Inc.)
- 17849783. VERTICAL NON-VOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17851393. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17851865. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17852812. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17858388. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17860021. PATTERNING OF 3D NAND PILLARS AND FLYING BUTTRESS SUPPORTS WITH TWO STRIPE TECHNIQUE simplified abstract (Micron Technology, Inc.)
- 17860027. PATTERNING OF 3D NAND PILLARS AND FLYING BUTTRESS SUPPORTS WITH THREE STRIPE TECHNIQUE simplified abstract (Micron Technology, Inc.)
- 17863697. MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17865565. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17867962. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17874738. METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17876271. MEMORY DEVICE INCLUDING PREFORMED RECESSES BETWEEN CONTACT STRUCTURES AND CONTROL GATES simplified abstract (Micron Technology, Inc.)
- 17876694. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17878236. METAL GATE STACKS FOR CMOS SCALING simplified abstract (Micron Technology, Inc.)
- 17893436. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17894524. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17897399. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897460. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897516. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897976. ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED METHODS simplified abstract (Micron Technology, Inc.)
- 17898827. SELF-SUPPORTING SGD STADIUM simplified abstract (Micron Technology, Inc.)
- 17900064. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17937360. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17940715. ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17944343. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17948521. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17959365. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17962577. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17970764. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17971443. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 18045971. MEMORY DEVICE HAVING VERTICAL STRUCTURE AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18047270. NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18054730. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18054970. METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL LAYER DEFINING AIR-GAP, AND SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
M
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
- Micron Technology, Inc. patent applications on March 14th, 2024
U
- US Patent Application 17751978. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract
- US Patent Application 17752207. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
- US Patent Application 17804184. THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DUAL-DEPTH DRAIN-SELECT-LEVEL ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME simplified abstract
- US Patent Application 17804270. MICROELECTRONIC DEVICES, RELATED ELECTRONIC SYSTEMS, AND METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract
- US Patent Application 17825337. NON-VOLATILE MEMORY WITH INTER-DIE CONNECTION simplified abstract
- US Patent Application 17826776. MEMORY DEVICE INCLUDING CONTACT STRUCTURES HAVING MULTI-LAYER DIELECTRIC LINER simplified abstract
- US Patent Application 17869586. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract
- US Patent Application 17879140. Integrated Circuitry, Memory Arrays Comprising Strings Of Memory Cells, Methods Used In Forming Integrated Circuitry, And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
