Category:CPC H10N70/231

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Pages in category "CPC H10N70/231"

The following 40 pages are in this category, out of 40 total.

1

18150884. PHASE-CHANGE MEMORY DEVICE WITH TAPERED THERMAL TRANSFER LAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
18171380. PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE WITH NOVEL SPREADER DESIGN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
18188729. PHASE CHANGE MATERIAL INCLUDING DEUTERIUM simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18298132. HIGH-FREQUENCY, LOW-VOLTAGE SWITCH DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
18411254. Generating Self-Aligned Heater for PCRAM Using Filaments simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18582551. MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
18617007. MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES simplified abstract (Micron Technology, Inc.)
18650104. MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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