20250221318. Magnetoelectric Spin–orbit (Intel)
MAGNETOELECTRIC SPIN–ORBIT (MESO) DEVICE WITH ANTIFERROMAGNETIC SPIN INJECTION AND SPIN ABSORPTION FOR INCREASED OUTPUT VOLTAGE
Abstract: magnetoelectric spin-orbit (meso) devices, integrated circuit devices and systems with meso devices, and methods of forming the same, are disclosed herein. in one embodiment, a semiconductor device includes: a first layer that includes a magnetoelectric material; one or more second layers over the first layer, where the second layer(s) include one or more ferromagnetic materials; a third layer over the second layer(s), where the third layer includes an antiferromagnetic material; and a fourth layer over the third layer, where the fourth layer includes at least one of a metal, a topological insulator, or a two-dimensional (2d) semiconductor material.
Inventor(s): Mahendra DC, Punyashloka Debashis, Dmitri Evgenievich Nikonov, Hai Li, Ian Alexander Young, Marko Radosavljevic, John J. Plombon, Scott B. Clendenning, Carly Rogan, Dominique A. Adams
CPC Classification: H10N50/20 (Spin-polarised current-controlled devices)
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- Patent Applications
- Intel Corporation
- CPC H10N50/20
- Mahendra DC of Portland OR US
- Punyashloka Debashis of Hillsboro OR US
- Dmitri Evgenievich Nikonov of Beaverton OR US
- Hai Li of Portland OR US
- Ian Alexander Young of Olympia WA US
- Marko Radosavljevic of Portland OR US
- John J. Plombon of Portland OR US
- Scott B. Clendenning of Portland OR US
- Carly Rogan of North Plains OR US
- Dominique A. Adams of Portland OR US