View source for 20250221317. Mram Device Having Two-terminal Select (Taiwan Semiconductor Manufacturing , .)

= MRAM DEVICE HAVING TWO-TERMINAL SELECTORS =

'''Abstract''':
a memory device includes a spin-orbit torque (“sot”) conductor, a magnetic tunneling junction (“mtj”) structure above the sot conductor, a two-terminal read selector above the mtj structure, a two-terminal write selector above the mtj structure, and a bit line below the sot conductor. the two-terminal read selector is conductively connected to the pinned layer in the mtj structure. the two-terminal write selector is conductively connected to a first terminal of the sot conductor. the bit line is conductively connected to a second terminal of the sot conductor.

'''Inventor(s)''': [[:Category:Elia AMBROSI of Hsinchu  TW|Elia AMBROSI]], [[:Category:MingYuan SONG of Hsinchu  TW|MingYuan SONG]], [[:Category:Cheng-Hsien WU of Hsinchu  TW|Cheng-Hsien WU]], [[:Category:Xinyu BAO of Hsinchu  TW|Xinyu BAO]]

'''CPC Classification''': [[:Category:CPC_H10N50/10|H10N50/10]] (Magnetoresistive devices)


[[Category:Patent Applications]]
[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]
[[Category:CPC_H10N50/10]]
[[Category:Elia AMBROSI of Hsinchu  TW]]
[[Category:MingYuan SONG of Hsinchu  TW]]
[[Category:Cheng-Hsien WU of Hsinchu  TW]]
[[Category:Xinyu BAO of Hsinchu  TW]]

[https://wikipatents.org/index.php?search=20250221317+rejection&title=Special%3ASearch&wprov=acrw1_-1 Search for rejections for patent application number 20250221317]


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