18735715. RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yun-Sheng Chen of Hsinchu (TW)
Jonathan Tsung-Yung Chang of Hsinchu (TW)
Chrong-Jung Lin of Hsinchu (TW)
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18735715 titled 'RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
The abstract of a patent application describes a resistive memory device with a bottom electrode, a top electrode, and a resistance changing element. The top electrode is positioned above and spaced apart from the bottom electrode, with a downward protrusion aligned with the bottom electrode. The resistance changing element covers the side and bottom surfaces of the downward protrusion.
- The resistive memory device consists of a bottom electrode, a top electrode, and a resistance changing element.
- The top electrode is located above and separated from the bottom electrode, featuring a downward protrusion that aligns with the bottom electrode.
- The resistance changing element covers the side and bottom surfaces of the downward protrusion.
Potential Applications: - This technology can be used in non-volatile memory applications. - It may find applications in data storage devices. - It could be utilized in neuromorphic computing systems.
Problems Solved: - Provides a compact and efficient resistive memory device design. - Enhances the performance and reliability of memory storage systems. - Offers a cost-effective solution for memory technology.
Benefits: - Improved memory device performance. - Enhanced data storage capabilities. - Cost-effective and reliable memory solutions.
Commercial Applications: Title: Innovative Resistive Memory Device for Enhanced Data Storage This technology can be commercialized for: - Memory chip manufacturing companies. - Electronics and semiconductor industries. - Research institutions focusing on memory technologies.
Questions about Resistive Memory Devices: 1. How does the resistive memory device differ from traditional memory technologies?
- The resistive memory device offers higher performance and reliability compared to traditional memory technologies due to its unique design and materials.
2. What are the potential challenges in implementing resistive memory devices in commercial products?
- Some challenges may include scalability issues, manufacturing complexities, and compatibility with existing systems.
Original Abstract Submitted
A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Der Chih of Hsinchu (TW)
- Wen-Zhang Lin of Hsinchu (TW)
- Yun-Sheng Chen of Hsinchu (TW)
- Jonathan Tsung-Yung Chang of Hsinchu (TW)
- Chrong-Jung Lin of Hsinchu (TW)
- Ya-Chin King of Hsinchu (TW)
- Cheng-Jun Lin of Hsinchu (TW)
- Wang-Yi Lee of Hsinchu (TW)
- H10N70/00
- H10B63/00
- CPC H10N70/021