18669541. MEMORY DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
Contents
MEMORY DEVICES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor(s)
Hung-Li Chiang of Taipei City (TW)
Jer-Fu Wang of Taipei City (TW)
Chao-Ching Cheng of Hsinchu City (TW)
Tzu-Chiang Chen of Hsinchu City (TW)
MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18669541 titled 'MEMORY DEVICES
The method described in the patent application involves the formation of a memory device through several key steps:
- A first conductive plug is created within a first dielectric layer on a substrate.
- A treating process is conducted to convert a portion of the first conductive plug into a buffer layer, which then covers the remaining portion of the plug.
- A phase change layer and a top electrode are then sequentially formed over the buffer layer.
- A second dielectric layer is applied to encapsulate the top electrode and the underlying phase change layer.
- A second conductive plug is formed within the second dielectric layer, making physical contact with the top electrode.
- A filamentary bottom electrode is formed within the buffer layer.
Potential Applications: - Non-volatile memory devices - Data storage applications - Embedded memory in integrated circuits
Problems Solved: - Improving memory device performance - Enhancing data storage capabilities - Increasing memory density
Benefits: - Higher memory device efficiency - Enhanced data retention - Improved overall device performance
Commercial Applications: Title: "Innovative Memory Device Technology for Enhanced Data Storage" This technology could be utilized in various commercial applications such as: - Consumer electronics - Automotive systems - Industrial automation
Questions about the technology: 1. How does the formation of a buffer layer impact the performance of the memory device?
- The buffer layer helps to improve the stability and reliability of the memory device by acting as a protective barrier.
2. What advantages does the use of a phase change layer offer in this memory device technology?
- The phase change layer allows for fast and reversible changes in the electrical resistance of the device, enabling efficient data storage and retrieval.
Original Abstract Submitted
A method of forming a memory device includes the following operations. A first conductive plug is formed within a first dielectric layer over a substrate. A treating process is performed to transform a portion of the first conductive plug into a buffer layer, and the buffer layer caps the remaining portion of the first conductive plug. A phase change layer and a top electrode are sequentially formed over the buffer layer. A second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer. A second conductive plug is formed within the second dielectric layer and in physical contact with the top electrode. A filamentary bottom electrode is formed within the buffer layer.
