18650104. MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yu-Chao Lin of Hsinchu City (TW)

Yu-Sheng Chen of Taoyuan City (TW)

Carlos H. Diaz of Los Altos Hills CA (US)

Da-Ching Chiou of Hsinchu City (TW)

MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18650104 titled 'MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF MANUFACTURING THE SAME

The memory cell described in the patent application consists of a bottom electrode, a storage element layer, a first buffer layer, and a top electrode. The storage element layer is positioned above the bottom electrode, with the first buffer layer placed between the storage element layer and the bottom electrode. The thermal conductivity of the first buffer layer is lower than that of the storage element layer. The top electrode is located above the storage element layer, with the storage element layer sandwiched between the top electrode and the first buffer layer.

  • The memory cell design includes a unique first buffer layer with lower thermal conductivity than the storage element layer.
  • The arrangement of the layers helps in efficient heat dissipation and thermal management within the memory cell.
  • The use of specific materials and layering techniques enhances the overall performance and reliability of the memory cell.
  • This innovation aims to improve the efficiency and longevity of memory cells in electronic devices.
  • The patent application focuses on optimizing thermal properties to enhance the functionality of memory cells.

Potential Applications: This technology can be applied in various electronic devices such as smartphones, computers, and tablets to improve memory cell performance and reliability.

Problems Solved: The technology addresses issues related to heat dissipation and thermal management in memory cells, ultimately enhancing their efficiency and longevity.

Benefits: The benefits of this technology include improved memory cell performance, enhanced reliability, and better thermal management within electronic devices.

Commercial Applications: This technology has commercial applications in the semiconductor industry, specifically in the production of memory components for electronic devices. It can lead to more efficient and reliable memory solutions for consumers.

Questions about the Technology: 1. How does the thermal conductivity of the first buffer layer impact the overall performance of the memory cell? 2. What specific materials are used in the storage element layer to optimize its functionality and thermal properties?


Original Abstract Submitted

A memory cell includes a bottom electrode, a storage element layer, a first buffer layer, and a top electrode. The storage element layer is disposed over the bottom electrode. The first buffer layer is interposed between the storage element layer and the bottom electrode, where a thermal conductivity of the first buffer layer is less than a thermal conductivity of the storage element layer. The top electrode is disposed over the storage element layer, where the storage element layer is disposed between the top electrode and the first buffer layer.