18613476. NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE
Organization Name
Inventor(s)
Donghun Kang of San Jose CA (US)
NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18613476 titled 'NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE
Simplified Explanation: The semiconductor device described in the patent application consists of gate stacks with alternating layers of different semiconductor materials, including nanostructures. It also includes source/drain regions, insulating regions, and dopant blocking superlattices.
- The semiconductor device features gate stacks with alternating layers of first and second semiconductor materials.
- The layers of the second semiconductor material form nanostructures within the gate stacks.
- Source/drain regions are present within the trenches defined by the gate stacks.
- Insulating regions are located adjacent to the lateral ends of the layers of the first semiconductor material.
- Dopant blocking superlattices are positioned adjacent to the lateral ends of the nanostructures and offset outwardly from the insulating regions.
- Each dopant blocking superlattice comprises stacked groups of layers, with base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent base semiconductor portions.
Potential Applications: 1. Advanced semiconductor devices for high-performance electronics. 2. Nanotechnology applications for nanostructure fabrication. 3. Improved doping control in semiconductor manufacturing processes.
Problems Solved: 1. Enhanced performance and efficiency of semiconductor devices. 2. Precise control over dopant diffusion in semiconductor materials. 3. Facilitates the fabrication of nanostructures in semiconductor devices.
Benefits: 1. Increased speed and reliability of electronic devices. 2. Improved energy efficiency in semiconductor components. 3. Enables the development of next-generation semiconductor technologies.
Commercial Applications: Advanced Semiconductor Manufacturing: The technology can be utilized in the production of high-performance semiconductor devices for various electronic applications, including smartphones, computers, and IoT devices.
Prior Art: Prior art related to this technology may include research on nanostructure fabrication in semiconductor devices, dopant diffusion control, and advanced gate stack designs in semiconductor manufacturing.
Frequently Updated Research: Researchers are continually exploring new methods to enhance the performance and efficiency of semiconductor devices through innovative materials and structures.
Questions about Semiconductor Device Technology: 1. How does the incorporation of nanostructures in gate stacks improve the performance of semiconductor devices? 2. What are the potential challenges in scaling up the production of semiconductor devices with dopant blocking superlattices?
Original Abstract Submitted
A semiconductor device may include a substrate and spaced apart gate stacks on the substrate defining respective trenches therebetween. Each gate stack may include alternating layers of first and second semiconductor materials, with the layers of the second semiconductor material defining nanostructures. The semiconductor device may further include respective source/drain regions within the trenches, respective insulating regions adjacent lateral ends of the layers of the first semiconductor material, and respective dopant blocking superlattices adjacent lateral ends of the nanostructures and offset outwardly from adjacent surfaces of the insulating regions. Each dopant blocking superlattice may include a plurality of stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
