SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Kiyeon Yang of Suwon-si (KR)

Donggeon Gu of Hwaseong-si (KR)

Bonwon Koo of Suwon-si (KR)

Jeonghee Park of Hwaseong-si (KR)

Hajun Sung of Suwon-si (KR)

Dongho Ahn of Hwaseong-si (KR)

Zhe Wu of Hwaseong-si (KR)

Changseung Lee of Suwon-si (KR)

Minwoo Choi of Suwon-si (KR)

SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18594355 titled 'SELF-SELECTING MEMORY DEVICE HAVING POLARITY DEPENDENT THRESHOLD VOLTAGE SHIFT CHARACTERISTICS AND MEMORY APPARATUS INCLUDING THE SAME

Simplified Explanation

The patent application describes a memory device with polarity-dependent threshold voltage shift characteristics, as well as a memory apparatus incorporating this device. The memory device includes electrodes and a memory layer with Ovonic threshold switching characteristics, where the threshold voltage changes based on the density of active traps and the polarity and intensity of the bias voltage applied.

Key Features and Innovation

Self-selecting memory device with polarity-dependent threshold voltage shift characteristics
Memory layer with Ovonic threshold switching characteristics
Threshold voltage changes based on density of active traps and bias voltage polarity and intensity
Element composition distribution maintained constant in response to threshold voltage changes

Potential Applications

This technology could be used in:

Non-volatile memory devices
Neuromorphic computing
Artificial intelligence applications
Wearable technology
Internet of Things (IoT) devices

Problems Solved

Addressing the need for memory devices with self-selecting capabilities
Enhancing memory performance and reliability
Improving energy efficiency in memory systems

Benefits

Increased memory device efficiency
Enhanced data storage and retrieval capabilities
Potential for faster computing speeds
Improved overall system performance
Energy savings in memory operations

Commercial Applications

The technology could be applied in the development of next-generation memory devices for various industries, including consumer electronics, healthcare, automotive, and telecommunications. Its potential impact on data storage, processing speed, and energy efficiency could lead to significant advancements in these sectors.

Questions about Memory Device Technology

How does the memory device's threshold voltage shift based on bias voltage polarity and intensity?

The memory device's threshold voltage changes as the density of active traps in the memory layer is altered, with the polarity and intensity of the bias voltage influencing this shift.

What are the potential applications of memory devices with self-selecting capabilities?

Memory devices with self-selecting capabilities could be utilized in various fields such as non-volatile memory storage, neuromorphic computing, artificial intelligence, wearable technology, and IoT devices.

Original Abstract Submitted

Provided are a self-selecting memory device having polarity dependent threshold voltage shift characteristics and/or a memory apparatus including the self-selecting memory device. The memory device includes a first electrode, a second electrode apart from and facing the first electrode, and a memory layer between the first electrode and the second electrode. The memory layer has Ovonic threshold switching characteristics and is configured to have a threshold voltage of the memory layer be changed as a density of active traps in the memory layer is changed, the threshold voltage changing according to the polarity and the intensity of a bias voltage applied to the memory layer. Furthermore, an element composition distribution is configured to be maintained constant in the memory layer in response to the threshold voltage of the memory layer changing.