18582308. MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Nanyang Technological University)
Contents
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Nanyang Technological University
Inventor(s)
Diing Shenp Ang of Singapore (SG)
Haider Abbas of Singapore (SG)
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18582308 titled 'MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Simplified Explanation:**
The patent application describes a memory device with a transition-metal chalcogenide-based layer sandwiched between two electrodes.
- Key Features and Innovation:**
- Memory device with a transition-metal chalcogenide-based layer
- First electrode and second electrode arranged opposite to each other
- Direct contact between the transition-metal chalcogenide-based layer and the electrodes
- Potential Applications:**
This technology could be used in various memory storage devices, such as solid-state drives and non-volatile memory.
- Problems Solved:**
The technology addresses the need for efficient and reliable memory storage solutions.
- Benefits:**
- Improved memory storage capabilities
- Enhanced performance and reliability
- Potential for smaller and more energy-efficient devices
- Commercial Applications:**
Potential commercial applications include the manufacturing of solid-state drives, memory cards, and other electronic devices requiring memory storage solutions.
- Prior Art:**
Readers can start searching for prior art related to transition-metal chalcogenide-based memory devices in the field of semiconductor technology and materials science.
- Frequently Updated Research:**
Stay updated on advancements in transition-metal chalcogenide-based memory devices in semiconductor research and development.
- Questions about Memory Devices:**
1. What are the key advantages of using transition-metal chalcogenide-based layers in memory devices? 2. How does the direct contact between the electrodes and the transition-metal chalcogenide-based layer improve device performance?
Original Abstract Submitted
According to embodiments of the present invention, a device or more specifically, a memory device is provided. The device includes a first electrode; a second electrode arranged opposite to the first electrode; and a transition-metal chalcogenide-based layer sandwiched between the first electrode and the second electrode, wherein the transition-metal chalcogenide-based layer is in direct contact with the first electrode and the second electrode. According to further embodiments of the present invention, a method for manufacturing the device is also provided.
