18540222. MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE (Samsung Electronics Co., Ltd.)
MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE
Organization Name
Inventor(s)
Changseung Lee of Suwon-si (KR)
MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE
This abstract first appeared for US patent application 18540222 titled 'MEMORY DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE
Original Abstract Submitted
Provided are a memory device, a manufacturing method thereof, and an electronic apparatus including the memory device. The memory device may include a plurality of first conductors arranged apart from each other and perpendicular to a substrate, a second conductor extending perpendicular to the substrate, a chalcogenide layer extending perpendicular to the substrate between the plurality of first conductors and the second conductor, and a plurality of first diffusion barrier layers selectively arranged only on the plurality of first conductors between the plurality of first conductors and the chalcogenide layer. The plurality of first diffusion barrier layers each may include a carbon-based material.