18479323. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
MUNHYEON Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18479323 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract of the patent application describes a method of manufacturing a semiconductor device. The method involves several steps, including forming sacrificial and active layers on a substrate, etching the layers partially using a mask pattern, forming a semiconductor layer on the exposed surface of the substrate, forming additional sacrificial and active layers on top of the semiconductor layer, and creating channel patterns by removing the sacrificial layers.
- The method involves forming sacrificial and active layers on a substrate.
- A mask pattern is used to partially etch the sacrificial and active layers, exposing a portion of the substrate's surface.
- A semiconductor layer is formed on the exposed surface of the substrate.
- Additional sacrificial and active layers are formed on top of the semiconductor layer.
- A trench is created using a mask pattern, defining active patterns.
- The sacrificial layers are removed, resulting in the formation of channel patterns on the active patterns.
Potential applications of this technology:
- Manufacturing of semiconductor devices, such as integrated circuits and transistors.
- Fabrication of electronic components used in various industries, including telecommunications, consumer electronics, and automotive.
Problems solved by this technology:
- Provides a method for manufacturing semiconductor devices with precise channel patterns.
- Enables the formation of multiple active layers on a substrate, increasing device functionality.
- Offers a way to selectively etch sacrificial layers, allowing for the creation of complex device structures.
Benefits of this technology:
- Improved performance and functionality of semiconductor devices.
- Enhanced manufacturing efficiency and yield.
- Enables the production of smaller and more compact devices.
- Provides flexibility in designing and fabricating complex device structures.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a first sacrificial and first active layer on a substrate; forming a first mask pattern on a portion of the substrate; etching the first sacrificial and first active layer partially using the first mask pattern to expose a portion of a top surface of the substrate; forming a semiconductor layer on the exposed top surface of the substrate; forming sacrificial layers and active layers on the first active and semiconductor layer, the active layers including an uppermost second active layer; forming a second mask pattern on a portion of the second active layer; forming a trench using the second mask pattern, the trench defining a first and second active pattern; and removing the sacrificial layers to form a first and second channel patterns on the first and second active patterns, respectively, wherein the first active pattern includes the semiconductor layer.
