View source for 18460437. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)

=SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME=


==Organization Name==

[[:Category:SK hynix Inc.|SK hynix Inc.]]


[[Category:SK hynix Inc.]]

==Inventor(s)==

[[:Category:Tae Jung Ha of Icheon-si (KR)|Tae Jung Ha of Icheon-si (KR)]][[Category:Tae Jung Ha of Icheon-si (KR)]]

==SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18460437 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

'''Simplified Explanation:'''
The patent application describes semiconductor devices with memory cells that include resistive layers, selector layers, and memory layers for data storage.

* The memory cells consist of resistive layers with specific resistance, selector layers for threshold switching, and memory layers for data storage.

'''Key Features and Innovation:'''
* Memory cells with resistive layers, selector layers, and memory layers.
* Resistive layers with specific resistance and upper and lower portions.
* Selector layers for threshold switching.
* Memory layers for data storage.

'''Potential Applications:'''
This technology can be used in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and IoT devices.

'''Problems Solved:'''
This technology addresses the need for efficient and reliable data storage in semiconductor devices.

'''Benefits:'''
* Improved data storage capabilities.
* Enhanced performance and reliability of semiconductor devices.

'''Commercial Applications:'''
Potential commercial applications include the manufacturing of memory chips for consumer electronics and industrial equipment.

'''Prior Art:'''
Readers can explore prior art related to resistive memory devices and threshold switching technologies in semiconductor manufacturing.

'''Frequently Updated Research:'''
Stay informed about the latest advancements in resistive memory technology and semiconductor device fabrication methods.

'''Questions about Semiconductor Devices:'''
1. How does the specific resistance of the resistive layer impact the performance of the memory cell?
2. What are the potential challenges in scaling up this technology for mass production?


==Original Abstract Submitted==

Semiconductor devices and fabrication methods of semiconductor devices are disclosed. In an embodiment, a semiconductor device May include a plurality of memory cells, and each of the plurality of memory cells may include: a resistive layer including a material having a specific resistance and including a lower portion and an upper portion disposed over the lower portion, wherein a width of the lower portion is smaller than a width of an uppermost surface of the upper portion; a selector layer disposed over the resistive layer and structured to perform a threshold switching by exhibiting different electrically conductive states in response to an applied voltage relative to a threshold voltage; and a memory layer disposed over the selector layer and structured to store data.



[[Category:H10N70/00]]
[[Category:H10B63/00]]
[[Category:CPC_H10N70/826]]