18459942. SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Sensor-Embedded Display Panels
- 1.13 Original Abstract Submitted
SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
Sungyoung Yun of Suwon-si (KR)
Chul Joon Heo of Suwon-si (KR)
Hyeong-Ju Kim of Suwon-si (KR)
Kyung Bae Park of Suwon-si (KR)
SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18459942 titled 'SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
Simplified Explanation
The patent application describes a sensor-embedded display panel with a light emitting element and a sensor that have specific layers and materials to enhance their performance.
Key Features and Innovation
- Separate portions of common auxiliary layers are used for the light emitting element and the sensor.
- The sensor includes semiconductor layers with specific properties to improve its function.
- An insertion layer with specific materials is placed between the semiconductor layer and the common auxiliary layer to optimize performance.
Potential Applications
This technology could be used in various display panels, screens, and devices that require sensors for detecting light or other environmental factors.
Problems Solved
The technology addresses the need for efficient and accurate sensors in display panels, improving their overall performance and functionality.
Benefits
- Enhanced sensor performance
- Improved accuracy in detecting light and other environmental factors
- Better overall functionality of display panels
Commercial Applications
- Display panels for smartphones, tablets, and other electronic devices
- Environmental monitoring systems
- Medical devices with sensor capabilities
Prior Art
Readers can explore prior patents related to sensor-embedded display panels, semiconductor layers, and materials used in sensors to understand the existing technology in this field.
Frequently Updated Research
Researchers are constantly exploring new materials and technologies to further enhance the performance of sensor-embedded display panels. Stay updated on the latest advancements in this field.
Questions about Sensor-Embedded Display Panels
What are the key components of a sensor-embedded display panel?
A sensor-embedded display panel typically consists of a light emitting element, a sensor, semiconductor layers, and specific auxiliary layers to optimize performance.
How does the insertion layer improve sensor functionality?
The insertion layer, made of specific materials, helps to enhance the interaction between the semiconductor layer and the common auxiliary layer, leading to improved sensor performance.
Original Abstract Submitted
A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.
