18425677. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Daisuke Isobe of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18425677 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a constant current source, a current mirror circuit, a temperature detection circuit, a reference voltage generation circuit, and a comparison circuit. The current mirror circuit copies a current from the constant current source to generate a copied current. The temperature detection circuit uses a temperature detection diode and a temperature detection voltage generation circuit to output a temperature detection voltage based on the copied current. The reference voltage generation circuit generates a reference voltage also based on the copied current. The comparison circuit then outputs a temperature detection signal by comparing the temperature detection voltage with the reference voltage.
Key Features and Innovation
- Constant current source
- Current mirror circuit for copying current
- Temperature detection circuit with a temperature detection diode
- Reference voltage generation circuit
- Comparison circuit for outputting temperature detection signal
- Same characteristics for temperature detection voltage generation circuit and reference voltage generation circuit
Potential Applications
The technology can be applied in various semiconductor devices requiring precise temperature detection and control, such as in sensors, power management systems, and automotive electronics.
Problems Solved
This technology addresses the need for accurate temperature detection and control in semiconductor devices, ensuring optimal performance and reliability.
Benefits
- Precise temperature detection
- Reliable performance
- Enhanced control over semiconductor devices
Commercial Applications
- Sensor technology
- Power management systems
- Automotive electronics
Prior Art
Readers interested in exploring prior art related to this technology can start by researching semiconductor device patents involving temperature detection circuits and current mirror circuits.
Frequently Updated Research
Stay updated on advancements in semiconductor technology, temperature detection methods, and current mirror circuit designs to enhance the capabilities of this innovation.
Questions about Semiconductor Device
What are the key components of the semiconductor device described in the patent application?
The key components include a constant current source, a current mirror circuit, a temperature detection circuit, a reference voltage generation circuit, and a comparison circuit.
How does the comparison circuit in the semiconductor device function?
The comparison circuit outputs a temperature detection signal by comparing the temperature detection voltage with the reference voltage.
Original Abstract Submitted
A semiconductor device includes a constant current source, a current mirror circuit, a temperature detection circuit, a reference voltage generation circuit, and a comparison circuit. The current mirror circuit copies a current from the constant current source to thereby generate a copied current. The temperature detection circuit includes a temperature detection diode and a temperature detection voltage generation circuit connected in series with the temperature detection diode, and outputs a temperature detection voltage based on the copied current. The reference voltage generation circuit generates a reference voltage based on the copied current. The comparison circuit outputs a temperature detection signal on the basis of a result of comparing the temperature detection voltage with the reference voltage. The temperature detection voltage generation circuit and the reference voltage generation circuit have the same characteristics.
