18345817. METHOD FOR FABRICATING SELECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK Hynix Inc.)

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METHOD FOR FABRICATING SELECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

Organization Name

SK Hynix Inc.

Inventor(s)

Keo Rock Choi of Icheon-si (KR)

Cha Deok Dong of Icheon-si (KR)

METHOD FOR FABRICATING SELECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18345817 titled 'METHOD FOR FABRICATING SELECTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

The method described in the abstract involves fabricating a selector by first forming an insulating layer, then doping the insulating layer with dopants through an ion implantation process, and finally restoring any damage caused by the ion implantation process through a subsequent process.

  • Insulating layer is formed as the initial step in the fabrication process.
  • Dopants are introduced into the insulating layer through ion implantation.
  • Damage caused by the ion implantation process is repaired in a subsequent step.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research

Problems Solved: - Damage caused by ion implantation process - Enhancing the performance of selectors in electronic devices

Benefits: - Improved efficiency in semiconductor fabrication - Enhanced reliability of electronic devices - Cost-effective manufacturing process

Commercial Applications: Title: "Advanced Selector Fabrication Method for Semiconductor Industry" This technology can be used in the production of various electronic devices, such as memory chips, processors, and sensors, leading to improved performance and reliability in the market.

Questions about the technology: 1. How does the ion implantation process affect the insulating layer? - The ion implantation process introduces dopants into the insulating layer, altering its properties and potentially causing damage that needs to be repaired. 2. What are the key advantages of using ion implantation in selector fabrication? - Ion implantation allows for precise control over the doping process, leading to enhanced performance and reliability in electronic devices.


Original Abstract Submitted

A method for fabricating a selector may include: forming an insulating layer; doping the insulating layer with dopants by performing an ion implantation process; and performing a subsequent process to the insulating layer doped with the dopants for restoring damage caused by the ion implantation process.