18330392. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE
Organization Name
Inventor(s)
Woo Cheol Lee of Icheon-si (KR)
THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18330392 titled 'THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE
The abstract describes a ferroelectric memory device with a complex structure involving gate electrode layers, electrode pillars, ferroelectric layers, and channel layers.
- The device includes a substrate and a gate structure with multiple gate electrode layers arranged perpendicular to the substrate surface.
- Electrode pillars extend along one direction inside a hole in the gate structure, separated by a device isolation structure.
- The gate structure also contains ferroelectric layers and channel layers corresponding to the gate electrode layers.
Potential Applications: - Memory storage in electronic devices - High-speed data processing applications
Problems Solved: - Enhanced memory storage capacity - Improved data processing speed
Benefits: - Increased efficiency in data storage and retrieval - Enhanced performance in electronic devices
Commercial Applications: Title: Advanced Ferroelectric Memory Devices for Next-Generation Electronics This technology can be utilized in: - Consumer electronics - Data centers - Communication devices
Questions about Ferroelectric Memory Devices: 1. How do ferroelectric memory devices differ from traditional memory devices?
- Ferroelectric memory devices utilize ferroelectric materials for data storage, offering faster read/write speeds and lower power consumption compared to traditional memory devices.
2. What are the key advantages of using ferroelectric memory devices in electronic applications?
- Ferroelectric memory devices provide higher data storage density, faster access times, and lower energy consumption, making them ideal for various electronic applications.
Original Abstract Submitted
A ferroelectric memory device includes a substrate, a gate structure disposed over the substrate. The gate structure includes a plurality of gate electrode layers spaced apart from each other along a first direction substantially perpendicular to a surface of the substrate. The ferroelectric memory device includes a first electrode pillar and a second electrode pillar that extend along the first direction and are disposed to be spaced apart from each other in a second direction substantially parallel to the surface of the substrate inside a hole penetrating the gate structure, and a device isolation structure disposed to cross the first and second electrode pillars and to separate the gate structure over the substrate. The gate structure further includes a plurality of ferroelectric layers and a plurality of channel layers which are disposed to correspond to the plurality of gate electrode layers.
