18273774. SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract (Sumitomo Electric Industries, Ltd.)
Contents
SILICON CARBIDE EPITAXIAL SUBSTRATE
Organization Name
Sumitomo Electric Industries, Ltd.
Inventor(s)
SILICON CARBIDE EPITAXIAL SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18273774 titled 'SILICON CARBIDE EPITAXIAL SUBSTRATE
The abstract of this patent application describes a structure with specific area densities and recess configurations on a main surface.
- The first area density is 0.03/cm or more.
- The second area density divided by the sum of the first and second area densities is 10% or less.
- The first recess extends in a straight line along a direction inclined with respect to certain directions.
- The first-direction-side end portion of the first recess is contiguous to a 4H polytype region.
- The second recess also extends in a straight line along a direction inclined with respect to certain directions.
- The first-direction-side end portion of the second recess is contiguous to a 3C polytype region.
Potential Applications: - Semiconductor devices - Optoelectronic devices - Microelectromechanical systems (MEMS)
Problems Solved: - Optimizing area densities for specific applications - Enhancing structural configurations for improved performance
Benefits: - Increased efficiency in semiconductor and optoelectronic devices - Enhanced reliability and functionality of MEMS devices
Commercial Applications: Title: "Advanced Semiconductor Structures for Enhanced Device Performance" This technology can be utilized in the semiconductor industry to improve the performance of various electronic devices, leading to increased market competitiveness and customer satisfaction.
Questions about the technology: 1. How does the specific area density affect the performance of semiconductor devices? 2. What are the advantages of having recess configurations contiguous to specific polytype regions in the structure?
Original Abstract Submitted
The first area density is 0.03/cmor more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less. As viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction, and a first-direction-side end portion of the first recess is contiguous to a 4H polytype region, and as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to a 3C polytype region.
