18167025. MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

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MEMORY DEVICES

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Hyun-Jin Kim of Suwon-si (KR)

MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18167025 titled 'MEMORY DEVICES

Simplified Explanation

The patent application describes a memory device that includes a non-volatile memory and a memory controller. The memory controller is responsible for writing data received from a host to the non-volatile memory. The memory controller is designed to receive first data integrity field (DIF) information from the host, which includes individual cyclic redundancy check (CRC) information generated based on the data. Based on this first DIF information, the memory controller generates second DIF information with a different structure. The memory controller then writes this second DIF information to the non-volatile memory.

  • The memory device includes a non-volatile memory and a memory controller.
  • The memory controller writes data received from a host to the non-volatile memory.
  • The memory controller receives first DIF information from the host, which includes individual CRC information.
  • Based on the first DIF information, the memory controller generates second DIF information with a different structure.
  • The memory controller writes the second DIF information to the non-volatile memory.

Potential applications of this technology:

  • Data storage devices: This memory device can be used in various data storage devices such as solid-state drives (SSDs) or memory cards.
  • Data integrity verification: The memory device's ability to generate and store DIF information can be utilized to verify the integrity of stored data.

Problems solved by this technology:

  • Data integrity: The memory device ensures the integrity of the stored data by generating and storing DIF information.
  • Data corruption prevention: The use of CRC information in the DIF helps in detecting and preventing data corruption during the writing process.

Benefits of this technology:

  • Enhanced data reliability: The memory device's ability to generate and store DIF information improves the reliability of the stored data.
  • Efficient data storage: The memory device's structure allows for efficient storage of DIF information, optimizing the use of memory space.


Original Abstract Submitted

A memory device includes a non-volatile memory and a memory controller for writing data received from a host to the non-volatile memory. The memory controller is configured to receive, from the host, first data integrity field (DIF) information associated with the data, the first DIF information including individual cyclic redundancy check (CRC) information generated based on the data; generate, based on the first DIF information, second DIF information having a structure that is different from a structure of the first DIF information; and write the second DIF information to the non-volatile memory.