18163785. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hong-Chih Chen of Changhua County (TW)
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18163785 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
The semiconductor structure described in the patent application includes a gate structure over a substrate, as well as a source/drain (S/D) structure adjacent to the gate structure. Additionally, there is a first dielectric layer over the S/D structure, and an S/D contact structure over the S/D structure that penetrates through the first dielectric layer. The top surface of the gate structure is higher than the top surface of the S/D contact structure.
- Gate structure formed over a substrate
- Source/drain (S/D) structure adjacent to the gate structure
- First dielectric layer over the S/D structure
- S/D contact structure penetrating through the first dielectric layer
- Top surface of the gate structure higher than the top surface of the S/D contact structure
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronic devices
Problems Solved: - Improved performance of semiconductor structures - Enhanced contact between components - Increased efficiency in electronic devices
Benefits: - Higher functionality - Improved reliability - Enhanced performance
Commercial Applications: Title: Advanced Semiconductor Structures for Enhanced Electronic Devices This technology can be utilized in the production of advanced electronic devices, leading to improved performance and reliability. The market implications include increased demand for high-quality semiconductor components in various industries.
Questions about Semiconductor Structures: 1. How does the positioning of the gate structure and S/D structure impact the overall performance of the semiconductor device? 2. What are the specific advantages of the S/D contact structure penetrating through the dielectric layer in terms of device functionality and efficiency?
Original Abstract Submitted
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a gate structure formed over a substrate, and a source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes a first dielectric layer formed over the S/D structure, and an S/D contact structure formed over the S/D structure. The S/D contact structure penetrates through the first dielectric layer, and a top surface of the gate structure is higher than a top surface of the S/D contact structure.
