18155114. METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR MEMORY simplified abstract (Changxin Memory Technologies, Inc.)

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METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR MEMORY

Organization Name

Changxin Memory Technologies, Inc.

Inventor(s)

Yi Tang of Hefei (CN)

METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18155114 titled 'METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR MEMORY

Simplified Explanation

The patent application describes a method for preparing a semiconductor structure, a semiconductor structure, and a semiconductor memory. The method involves forming a stack structure on a substrate and dividing it into multiple channel areas, first source-drain areas, and second source-drain areas. Each channel area extends in a second direction, while the first and second source-drain areas extend in a first direction. The first and second source-drain structures are formed in their respective areas, and a channel structure is formed in the channel area.

  • The method involves forming a stack structure on a substrate.
  • The stack structure is divided into multiple channel areas, first source-drain areas, and second source-drain areas.
  • Each channel area extends in a second direction.
  • Each first and second source-drain area extends in a first direction.
  • The first and second source-drain structures are formed in their respective areas.
  • A channel structure is formed in the channel area.

Potential Applications

  • This technology can be applied in the manufacturing of semiconductor structures and semiconductor memories.
  • It can be used in various electronic devices such as computers, smartphones, and tablets.

Problems Solved

  • The method provides a simplified and efficient way of preparing a semiconductor structure.
  • It allows for the formation of multiple channel areas and source-drain areas on a substrate.
  • The method enables the creation of a well-defined channel structure.

Benefits

  • The method simplifies the manufacturing process of semiconductor structures.
  • It improves the efficiency of semiconductor memory production.
  • The technology allows for the creation of more compact and high-performance electronic devices.


Original Abstract Submitted

A method for preparing a semiconductor structure, a semiconductor structure and a semiconductor memory are provided. The method includes: a substrate is provided; a stack structure is formed on the substrate; the stack structure is divided into multiple channel areas, first source-drain areas and second source-drain areas. Each channel area extends in a second direction, each first source-drain area and each second source-drain area extend in a first direction, and the first source-drain area and the second source-drain area are located on the same side of the channel area; a first source-drain structure extending in the first direction is formed in the first source-drain area and a second source-drain structure extending in the first direction is formed in the second source-drain area; and a channel structure extending in the second direction is formed in the channel area.

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