18147636. ION BEAM LITHOGRAPHY AND NANOENGINEERING simplified abstract (Intel Corporation)
Contents
ION BEAM LITHOGRAPHY AND NANOENGINEERING
Organization Name
Inventor(s)
Brandon Holybee of Portland OR (US)
Kirby Maxey of Hillsboro OR (US)
Kevin O'brien of Portland OR (US)
Mahmut Sami Kavrik of Eugene OR (US)
ION BEAM LITHOGRAPHY AND NANOENGINEERING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18147636 titled 'ION BEAM LITHOGRAPHY AND NANOENGINEERING
The patent application describes a method for ion beams fabrication on a wafer assembly with a top layer made of a material having 2D characteristics.
- The device overlays the wafer assembly with the top layer using an ion beam targeted to modify material characteristics or perform milling.
- The ion beam is tuned with a predetermined energy range or dosing level of ions for specific effects on the layers.
- The method allows for precise modification of material characteristics and milling of layers in the wafer assembly.
Potential Applications:
- Semiconductor manufacturing
- Nanotechnology research
- Advanced materials development
Problems Solved:
- Precise fabrication of materials with 2D characteristics
- Controlled modification of material properties in layers
Benefits:
- Enhanced control over material characteristics
- Improved efficiency in fabrication processes
Commercial Applications: Ion beam fabrication technology can be utilized in the semiconductor industry for producing advanced electronic devices with enhanced performance and efficiency.
Questions about Ion Beam Fabrication: 1. How does ion beam tuning impact the fabrication process?
- Ion beam tuning affects the material characteristics and milling precision in the wafer assembly.
2. What are the potential advantages of using ion beams in fabrication processes?
- Ion beams offer precise control over material properties and enable efficient fabrication of advanced materials.
Original Abstract Submitted
This disclosure describes systems, apparatus, methods, and devices related to ion beams fabrication. A device may overlay a wafer assembly of one or more layers with a top layer comprised of a material having 2D material characteristics. The device may be fabricated by applying an ion beam targeted to at least one of one or more regions of the top layer or a resist layer placed on top of the top layer, wherein the ion beam is tuned using a predetermined energy range or a dosing level of ions to modify material characteristics of the resist layer or to perform milling of the top layer or other layers of the one or more layers of the wafer assembly.
