18107427. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING TOOL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING TOOL
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tung-Hung Feng of Hsinchu (TW)
Peng-Ting Lee of Hsinchu City (TW)
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING TOOL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18107427 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING TOOL
Simplified Explanation
The patent application describes a method of manufacturing a semiconductor device using a photoresist layer. Here are the key points:
- A photoresist layer is formed on a substrate.
- The photoresist layer is selectively exposed to actinic radiation.
- The exposed photoresist layer is heated.
- During the heating process, a gas is flowed over the photoresist layer.
- The flow of the gas is varied during the heating process.
- After heating, the photoresist layer is developed to form a pattern.
Potential applications of this technology:
- Manufacturing of semiconductor devices.
- Fabrication of integrated circuits.
- Production of microchips and electronic components.
Problems solved by this technology:
- Provides a method for precise patterning of photoresist layers.
- Enables the production of complex semiconductor structures.
- Improves the efficiency and accuracy of semiconductor manufacturing processes.
Benefits of this technology:
- Allows for the creation of intricate patterns on semiconductor devices.
- Enhances the performance and functionality of electronic components.
- Increases the yield and quality of semiconductor manufacturing.
- Reduces production costs and time.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is heated after selectively exposing the photoresist layer to actinic radiation. A gas is flowed over the photoresist layer during the heating the photoresist layer. A flow of the gas is varied during the heating the photoresist layer, and the photoresist layer is developed after the heating the photoresist layer to form a pattern in the photoresist layer.
