18093156. PLASMA-ENHANCED MOLYBDENUM DEPOSITION simplified abstract (Applied Materials, Inc.)

PLASMA-ENHANCED MOLYBDENUM DEPOSITION

Organization Name

Applied Materials, Inc.

Inventor(s)

Tuerxun Ailihumaer of Santa Clara CA (US)

Srinivas Gandikota of Santa Clara CA (US)

Yixiong Yang of Fremont CA (US)

Yogesh Sharma of Sunnyvale CA (US)

Ashutosh Agarwal of San Jose CA (US)

Mandyam Sriram of San Jose CA (US)

PLASMA-ENHANCED MOLYBDENUM DEPOSITION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18093156 titled 'PLASMA-ENHANCED MOLYBDENUM DEPOSITION

Embodiments of the disclosure involve methods for depositing a molybdenum film directly onto a substrate surface using a molybdenum-containing precursor and an organosilane reducing agent at temperatures below 450°C.

• Molybdenum film is deposited directly on a substrate surface.
• Molybdenum-containing precursors include MoCl, MoOCl, MoOCl, MoF, molybdenum hexacarbonyl, and other compounds.
• Organosilane reducing agents like 1,4-bis(trimethylsilyl)-2-methyl-2,5-cyclohexadiene are used.
• Deposition process occurs at temperatures less than or equal to 450°C.

Potential Applications: - Semiconductor manufacturing - Thin film transistors - Solar cells - Microelectronics

Problems Solved: - Simplifies the process of depositing molybdenum films on substrates - Enables precise control over film thickness and quality

Benefits: - Cost-effective deposition method - Enhanced performance of electronic devices - Improved adhesion of molybdenum films

Commercial Applications: Title: Advanced Molybdenum Film Deposition Technology for Semiconductor Manufacturing This technology can be utilized in the production of various electronic devices, leading to improved performance and cost savings in the semiconductor industry.

Questions about Molybdenum Film Deposition: 1. How does the use of organosilane reducing agents impact the deposition process?

  - Organosilane reducing agents help reduce molybdenum-containing precursors, facilitating the deposition of high-quality films at lower temperatures.

2. What are the key advantages of depositing molybdenum films directly on substrate surfaces?

  - Direct deposition ensures better adhesion and control over film properties, enhancing the performance of electronic devices.

Original Abstract Submitted

Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-κ dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and an organosilane reducing agent at a temperature of less than or equal to 450° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl), molybdenum dioxide dichloride (MoOCl), molybdenum oxytetrachloride (MoOCl), molybdenum hexafluoride (MoF), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The organosilane reducing agent comprises trimethylsilyl compounds, such as 1,4-bis(trimethylsilyl)-2-methyl-2,5-cyclohexadiene.