18093110. REPAIR OF A SILICON-BASED BONDCOAT simplified abstract (General Electric Company)
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REPAIR OF A SILICON-BASED BONDCOAT
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REPAIR OF A SILICON-BASED BONDCOAT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18093110 titled 'REPAIR OF A SILICON-BASED BONDCOAT
Simplified Explanation: The patent application describes a method for repairing defects on a silicon-containing substrate by applying a powder mixture containing silicon and germanium, and heat treating it to form a repaired bondcoat.
- The method involves applying a powder mixture with silicon and germanium into the defect on the substrate.
- The powder mixture is heat treated at a specific temperature range to form a repaired bondcoat within the defect.
- The repaired bondcoat consists of a silicon-germanium phase with specific mole fractions of silicon and germanium.
Key Features and Innovation:
- Repairing defects on silicon-containing substrates using a powder mixture of silicon and germanium.
- Formation of a repaired bondcoat with specific silicon-germanium phase compositions.
- Heat treatment process at a precise temperature range for effective defect repair.
Potential Applications: The technology can be applied in industries such as semiconductor manufacturing, electronics, and solar panel production.
Problems Solved: The technology addresses the issue of defects on silicon-containing substrates, improving the overall quality and reliability of the components.
Benefits:
- Enhanced durability and performance of silicon-containing substrates.
- Cost-effective repair method for defects in coatings.
- Increased longevity of components through effective defect repair.
Commercial Applications: The technology can be utilized in the semiconductor industry for repairing defects in silicon-based components, leading to improved product quality and reliability.
Questions about Silicon-Germanium Bondcoat Repair: 1. How does the specific composition of silicon and germanium in the repaired bondcoat contribute to its effectiveness in defect repair? 2. What are the potential implications of using this technology in the solar panel manufacturing industry?
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Original Abstract Submitted
Methods are provided for repairing a defect on a silicon-containing substrate. The method may include applying a powder mixture into the defect of an existing coating on a surface of the silicon-containing substrate, wherein the powder mixture comprises silicon and germanium at a Ge mole fraction of 0.01 to 0.3; and heat treating the powder mixture within the defect at a sintering temperature that is 1150° C. to 1400° C. to form a repaired bondcoat within the defect. Repaired components are also provided that include a repaired bondcoat formed within the defect on the silicon-containing substrate, wherein the repaired bondcoat comprises a silicon-germanium phase comprising a Ge mole fraction of germanium of 0.01 to 0.3 and a Si mole fraction of silicon of 0.7 to 0.99.
