18068758. TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY simplified abstract (International Business Machines Corporation)
Contents
TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY
Organization Name
International Business Machines Corporation
Inventor(s)
Soon-Cheon Seo of Glenmont NY (US)
Chanro Park of Clifton Park NY (US)
Takashi Ando of Eastchester NY (US)
TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18068758 titled 'TOP CONTACT ON RESISTIVE RANDOM ACCESS MEMORY
The memory device described in the patent application includes a trench connected to a first electrically conductive structure, a first electrode made of a conformal electrically conductive material within the trench, a switching layer within the trench on the first electrode, and a second electrode overfilling the trench on the switching layer. Additionally, a contact is positioned on a portion of the second electrode that is overfilling the trench, offset horizontally from the first electrode in the trench.
- Trench connected to a first electrically conductive structure
- First electrode made of a conformal electrically conductive material within the trench
- Switching layer within the trench on the first electrode
- Second electrode overfilling the trench on the switching layer
- Contact positioned on a portion of the second electrode that is overfilling the trench, horizontally offset from the first electrode in the trench
Potential Applications: - Non-volatile memory devices - Semiconductor technology - Data storage systems
Problems Solved: - Improved memory device performance - Enhanced data storage capabilities - Increased efficiency in semiconductor devices
Benefits: - Higher data retention - Faster data access - Greater reliability in memory devices
Commercial Applications: Title: Advanced Non-Volatile Memory Devices for Enhanced Data Storage This technology could be utilized in the development of next-generation memory devices for various industries such as consumer electronics, data centers, and telecommunications. The market implications include improved data storage solutions, increased device performance, and enhanced reliability.
Questions about the technology: 1. How does the presence of the switching layer impact the performance of the memory device? 2. What are the potential cost implications of implementing this technology in semiconductor devices?
Frequently Updated Research: Ongoing research in the field of non-volatile memory devices focuses on improving data retention capabilities, increasing device speed, and reducing power consumption. Stay updated on the latest advancements in semiconductor technology to leverage the benefits of this innovative memory device design.
Original Abstract Submitted
A memory device including a trench to a first electrically conductive structure; a first electrode of a conformal electrically conductive material contained within the trench in electrical communication with the first electrically conductive structure and is present on sidewalls of the trench; a switching layer is present in the trench on the first electrode and extends outside the trench; and a second electrode present on the switching layer overfilling the trench. The memory device also includes a contact positioned on a portion of the second electrode that is overfilling the trench to provide that the contact is horizontally offset from the first electrode that is present in the trench.