17896060. PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Shao-Ming Yu of Hsinchu County (TW)
Yu-Chao Lin of Hsinchu City (TW)
Tung-Ying Lee of Hsinchu City (TW)
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17896060 titled 'PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The abstract describes a phase-change memory device with a first electrode, a stack, and a multi-layered spacer.
- The phase-change memory device includes a first electrode connected to an interconnect wiring, a stack with a phase-change layer and a second electrode, and a multi-layered spacer covering the stack.
- The multi-layered spacer has a first portion covering the top surface of the stack and a second portion covering the sidewall of the stack.
- Potential Applications:**
- Data storage in electronic devices
- Non-volatile memory applications
- High-speed memory devices
- Problems Solved:**
- Providing a reliable and efficient phase-change memory device
- Enhancing data storage capabilities in electronic devices
- Improving memory performance and speed
- Benefits:**
- Increased data storage capacity
- Faster memory access and retrieval
- Enhanced reliability and efficiency in memory devices
Original Abstract Submitted
A phase-change memory device and a method for fabricating the same are provided. The phase-change memory device comprises a first electrode, a stack and a multi-layered spacer. The first electrode is disposed on and electrically connected to an interconnect wiring of the interconnect structure. The stack is disposed on the first electrode and comprises a phase-change layer disposed on the first electrode and a second electrode disposed on the phase-change layer. The multi-layered spacer covers the stack. A first portion of the multi-layered spacer covers a top surface of the stack, and a second portion of the multi-layered spacer covers a sidewall of the stack.