17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
Contents
STORING BITS WITH CELLS IN A MEMORY DEVICE
Organization Name
Inventor(s)
Daniele Vimercati of El Dorado Hills CA (US)
STORING BITS WITH CELLS IN A MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17888298 titled 'STORING BITS WITH CELLS IN A MEMORY DEVICE
Simplified Explanation
The abstract describes methods, systems, and devices for storing bits in a memory device by generating sensing voltages based on digit line voltages and determining bit values based on the difference between these sensing voltages.
- Memory device stores bits using cells and generates sensing voltages based on digit line voltages.
- First sensing voltage is based on first and second digit line voltages, while second sensing voltage is based on third and fourth digit line voltages.
- Bit value is determined based on the difference between the first and second sensing voltages.
Potential Applications
- Data storage devices
- Computer memory systems
- Solid-state drives
Problems Solved
- Efficient storage of bits in memory devices
- Accurate determination of bit values
Benefits
- Improved data storage capabilities
- Enhanced memory device performance
- Increased reliability in storing and retrieving data
Original Abstract Submitted
Methods, systems, and devices for storing bits, such as N−1 bits, with cells, such as N cells, in a memory device are described. A memory device may generate a first sensing voltage that is based on a first voltage of a first digit line and a second voltage of a second digit line. The memory device may also generate a second sensing voltage that is based on a third voltage of a third digit line and a fourth voltage of a fourth digit line. The memory device may then determine a bit value based at least in part on a difference between the first sensing voltage and the second sensing voltage.
