17837712. METHOD AND SYSTEM FOR OVERLAY MEASUREMENT simplified abstract (NANYA TECHNOLOGY CORPORATION)

From WikiPatents
Jump to navigation Jump to search

METHOD AND SYSTEM FOR OVERLAY MEASUREMENT

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

CHUN-YEN Wei of TAIPEI CITY (TW)

METHOD AND SYSTEM FOR OVERLAY MEASUREMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17837712 titled 'METHOD AND SYSTEM FOR OVERLAY MEASUREMENT

Simplified Explanation

The present application describes a method for overlay measurement in which a first target is formed on one layer and a second target is formed on a different layer. These targets are not overlapped with each other. A lens with a grating is positioned to completely overlap with both targets, generating interference patterns. The overlay between the first and second targets is determined through these interference patterns.

  • The method involves forming targets on different layers and using a lens with a grating to measure their overlay.
  • The targets are not overlapped, ensuring accurate measurement of their alignment.
  • Interference patterns generated by the lens and targets are used to determine the overlay between the layers.

Potential Applications

This technology can be applied in various industries and processes where precise alignment and overlay measurement is crucial. Some potential applications include:

  • Semiconductor manufacturing: Ensuring accurate alignment of multiple layers in the fabrication process.
  • Display panel production: Measuring the alignment of different layers in the production of LCD or OLED panels.
  • Microelectronics assembly: Verifying the alignment of components and layers in the assembly of microelectronic devices.

Problems Solved

The method described in this patent application solves the problem of accurately measuring the overlay between different layers. By using targets on separate layers and a lens with a grating, the interference patterns provide a reliable and precise measurement of the overlay. This eliminates the need for complex and time-consuming measurement techniques.

Benefits

The use of this method offers several benefits:

  • Accurate measurement: The interference patterns generated by the lens and targets provide a highly accurate measurement of the overlay between layers.
  • Simplified process: The method simplifies the overlay measurement process by using targets on separate layers and a lens with a grating, eliminating the need for complex measurement techniques.
  • Time and cost savings: The simplified process reduces the time and cost associated with overlay measurement, improving overall efficiency in various industries.


Original Abstract Submitted

The present application discloses present disclosure provides a method for overlay measurement. The method includes forming a first target on a first layer; forming a second target on a second layer different from the first layer, wherein the first target and the second target are not overlapped to each other; positioning a lens including a grating configured thereon at a first location to completely overlap with the first target and the second target to generate an interference pattern of the first target and an interference pattern of the second target; and determining an overlay between the first target and the second target through the interference pattern of the first target and the interference pattern of the second target.

Retrieved from "http://wikipatents.org/index.php?title=17837712._METHOD_AND_SYSTEM_FOR_OVERLAY_MEASUREMENT_simplified_abstract_(NANYA_TECHNOLOGY_CORPORATION)&oldid=18646"