17816628. ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)

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ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME

Organization Name

Micron Technology, Inc.

Inventor(s)

SOSHI Sato of Sagamihara (JP)

ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17816628 titled 'ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract of the patent application describes an antifuse that includes a semiconductor substrate, a dielectric oxide layer, and a conductive gate layer. The dielectric oxide layer contains halogen, which helps in breaking down the dielectric oxide layer when an antifuse programming voltage is applied.

  • The antifuse is designed to facilitate the breakdown of the dielectric oxide layer.
  • It includes a semiconductor substrate, a dielectric oxide layer, and a conductive gate layer.
  • The dielectric oxide layer contains halogen, which aids in the breakdown process.
  • The antifuse programming voltage is applied to trigger the breakdown of the dielectric oxide layer.

Potential Applications:

  • Integrated circuits and semiconductor devices
  • Non-volatile memory technologies
  • Programmable logic devices

Problems Solved:

  • Facilitates controlled breakdown of the dielectric oxide layer
  • Enables precise programming of the antifuse

Benefits:

  • Improved reliability and performance of integrated circuits
  • Enhanced functionality of non-volatile memory technologies
  • Increased flexibility and versatility in programmable logic devices


Original Abstract Submitted

According to one or more embodiments of the disclosure, an antifuse is provided. The antifuse includes a semiconductor substrate, a dielectric oxide layer on the semiconductor substrate, and a conductive gate layer on the dielectric oxide layer. The dielectric oxide layer includes halogen to facilitate breakdown of the dielectric oxide layer upon application of an antifuse programming voltage.