17816628. ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)
Contents
ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME
Organization Name
Inventor(s)
ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17816628 titled 'ANTIFUSE, APPARATUS, AND METHOD OF FORMING THE SAME
Simplified Explanation
The abstract of the patent application describes an antifuse that includes a semiconductor substrate, a dielectric oxide layer, and a conductive gate layer. The dielectric oxide layer contains halogen, which helps in breaking down the dielectric oxide layer when an antifuse programming voltage is applied.
- The antifuse is designed to facilitate the breakdown of the dielectric oxide layer.
- It includes a semiconductor substrate, a dielectric oxide layer, and a conductive gate layer.
- The dielectric oxide layer contains halogen, which aids in the breakdown process.
- The antifuse programming voltage is applied to trigger the breakdown of the dielectric oxide layer.
Potential Applications:
- Integrated circuits and semiconductor devices
- Non-volatile memory technologies
- Programmable logic devices
Problems Solved:
- Facilitates controlled breakdown of the dielectric oxide layer
- Enables precise programming of the antifuse
Benefits:
- Improved reliability and performance of integrated circuits
- Enhanced functionality of non-volatile memory technologies
- Increased flexibility and versatility in programmable logic devices
Original Abstract Submitted
According to one or more embodiments of the disclosure, an antifuse is provided. The antifuse includes a semiconductor substrate, a dielectric oxide layer on the semiconductor substrate, and a conductive gate layer on the dielectric oxide layer. The dielectric oxide layer includes halogen to facilitate breakdown of the dielectric oxide layer upon application of an antifuse programming voltage.
